利用TEM研究了单晶镍基合金平行于应力轴的（100）晶面拉伸蠕变初期的位错组态，表明：形变特征是位错在γ相八面体滑移系中运动．在基体通道中，1／2＜110＞型位错运动相遇，发生反应而增殖；由于（100）晶面的基体通道受压应力，位错运动阻力大，密度小，位错运动多以交滑移和Orowan弓入方式进行；当受拉应力通道中弓出的位错环经交滑移进入压应力通道后，入口两侧被打扎，位错可定向弓入成为形貌类似于双端F-R源的位错组态．
The dislocation configuration in a single crystal Ni base alloy with (100) plane parallel to stress axis during primary creep has been investigated by TEM. The results show that the 1/2<110> dislocations are activated on the octahedral slip systems in the 7 matrix channels and multiplied by the dislocation reaction. The dislocations motion must overcome greater resistance and dislocations move in a form of cross-slip and shorter distance, because the normal γ matrix channels of (100) planes are subjected to compression stress. After dislocation loop in tensile stress matrix channels moves into compression stress matrix channels by means of cross-slip, both sides of the dislocation are pinned and it is simillar to the F-R dislocation configuration.
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