用射频溅射法制备了金属/半导体Fex(In2O_3)(1-x)颗粒膜.用XRD,TEM辅以磁性测量研究了该系列颗粒膜的微结构实验结果表明,纳米尺度的Fe颗粒均匀地分散在非晶态In2O3中.退火可使In2O3晶化,其晶格常数与Fe的体积分数有关;退火可使Fe颗粒长大,由超顺磁性变为铁磁性.
Metal/semiconductor Fex (In2O3)1-x granular films were prepared by the rfsputtering. The microstructure was studied by using XRD, TEM and magnetic measurements.The results showed that the nanometer-sized Fe particles uniformly dispersed in the amorphousIn2O3. Appropriate annealing leads to the crystallization of In2O3 films and the growth of theFe particle size. As a result, the magnetic behavior of the films transits from superparamagneticto ferromagnetic. The variation of the lattice constant for In2O3 depends on the volume fractionof Fe particles.
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