{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"本文采用<span style=\"color:red\">偏</span><span style=\"color:red\">轴</span><span style=\"color:red\">磁控溅射</span>方法在Pt/TiO2/SiO2/Si(111)基片上制备了多晶BiFeO3 (BFO)薄膜,并构架了Pt/BFO/Pt异质结电容器.利用X射线衍射(XRD)、铁电测试仪等手段研究了保持温度对BFO薄膜结构和性能的影响.XRD图谱表明制备的BFO薄膜均为多晶结构,在保持温度400℃±2℃的区间内得到的BFO薄膜不含明显杂相,其它的温度均有明显的杂相.在保持温度为400℃时得到了较为饱和的电滞回线,在900nm厚度的情况下,剩余极化强度仍可以达到Pr＞ 40 μC/cm2,达到了实际应用的要求Pr＞10μC/cm2.漏电流拟合机制表明在低场下属于欧姆机制,在高场下比较接近空间电荷限制电流(SCLC)机制.","authors":[{"authorName":"郝彦磊","id":"957d6d6d-0dee-408b-a770-a134920ce568","originalAuthorName":"郝彦磊"},{"authorName":"刘保亭","id":"99afdbbf-633a-44e7-97be-1d4d32db7218","originalAuthorName":"刘保亭"},{"authorName":"彭增伟","id":"3abe76ee-9f10-4cc7-b588-0445e9c843e0","originalAuthorName":"彭增伟"},{"authorName":"贾冬梅","id":"878e300a-e2ee-4a06-8888-f2c3a69ffa6d","originalAuthorName":"贾冬梅"},{"authorName":"朱慧娟","id":"c00095b6-3d8a-4447-8942-eadd96487834","originalAuthorName":"朱慧娟"},{"authorName":"张宪贵","id":"470a0ebc-5622-4439-a70f-c4b0b2cc9f2a","originalAuthorName":"张宪贵"}],"doi":"","fpage":"246","id":"2ef4d15b-7b67-44d5-98cc-9a443c52af89","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"13cb93a7-ee2b-406a-98d9-5dfd4792fd6a","keyword":"<span style=\"color:red\">偏</span><span style=\"color:red\">轴</span><span style=\"color:red\">磁控溅射</span>","originalKeyword":"偏轴磁控溅射"},{"id":"6d71f590-8b35-4aad-8655-90793b7eb615","keyword":"保持温度","originalKeyword":"保持温度"},{"id":"0c1ace96-91e3-444f-82d6-2870c6051279","keyword":"XRD","originalKeyword":"XRD"},{"id":"93d3a495-472c-45a1-a4e4-01f42059e750","keyword":"BiFeO3","originalKeyword":"BiFeO3"}],"language":"zh","publisherId":"rgjtxb98201302011","title":"保持温度对<span style=\"color:red\">偏</span><span style=\"color:red\">轴</span><span style=\"color:red\">磁控溅射</span>法制备BiFeO3薄膜结构和性能的影响","volume":"42","year":"2013"},{"abstractinfo":"采用90°离<span style=\"color:red\">轴</span><span style=\"color:red\">磁控溅射</span>法,在MgAl2O4(001)单晶基片上自组装生长了Pb(Zr0.52Ti0.48)O3-NiFe2O4 (PZT-NFO)复合磁电薄膜,并研究了基片温度、氩氧比和<span style=\"color:red\">溅射</span>功率等因素对薄膜结构和性能的影响.结果表明,适合生长PZT-NFO薄膜的条件为基片温度800℃,氩氧比1∶1,<span style=\"color:red\">溅射</span>功率160 W.XRD测试显示,PZT-NFO薄膜为外延生长薄膜,且PZT相与NFO相之间的垂直晶格失配非常小.AFM和SEM结构观察表明,薄膜具有清晰的1-3维纳米复合结构,铁磁相NFO纳米柱直径约为80～150 nm.降低氩氧比有助于NFO相的形成,但<span style=\"color:red\">溅射</span>功率过大会造成1-3维结构向无规则0-3维结构转变.磁性能测量表明纳米复合薄膜的饱和磁化强度在120～160 kA/m之间,低于块体的NFO相,可能是由于两相的界面扩散所造成.","authors":[{"authorName":"张辉","id":"eba76740-20b5-4767-b5e7-c1b8c5a93305","originalAuthorName":"张辉"},{"authorName":"马永军","id":"b503505e-e075-412e-9ba0-8122cc3551df","originalAuthorName":"马永军"},{"authorName":"王艺程","id":"c7955a34-dc2e-4332-907b-bca20c9db0cf","originalAuthorName":"王艺程"},{"authorName":"文丹丹","id":"318e7501-a4ce-4760-ae10-d08723d03612","originalAuthorName":"文丹丹"},{"authorName":"叶飞","id":"256ff82b-cda6-43fc-979f-a3668297c152","originalAuthorName":"叶飞"},{"authorName":"白飞明","id":"a29fd130-b6f3-4c86-8b89-5e7dfc5488d0","originalAuthorName":"白飞明"}],"doi":"10.3724/SP.J.1077.2013.13363","fpage":"371","id":"286170ce-ff39-41aa-a6ff-ed2fe5b87888","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"f2939068-a91b-4b87-922a-f19e8b8e04e2","keyword":"纳米复合","originalKeyword":"纳米复合"},{"id":"8ca0ffef-6b1f-4c42-a282-a39a704653b1","keyword":"磁电效应","originalKeyword":"磁电效应"},{"id":"2efb44c7-9d9a-40b9-9d58-b0f6fe456e8a","keyword":"<span style=\"color:red\">磁控溅射</span>","originalKeyword":"磁控溅射"},{"id":"2759f307-5a42-412e-ac70-0ffdfff427a6","keyword":"自组装","originalKeyword":"自组装"}],"language":"zh","publisherId":"wjclxb201404006","title":"离<span style=\"color:red\">轴</span><span style=\"color:red\">磁控溅射</span>法生长1-3维PZT-NFO纳米复合薄膜","volume":"29","year":"2014"},{"abstractinfo":"直流<span style=\"color:red\">磁控溅射</span>是重要的物理气相沉积技术,广泛应用在工业生产和科学研究中.主要评论了近年来直流<span style=\"color:red\">磁控溅射</span>技术在<span style=\"color:red\">溅射</span>机理和非平衡闭合磁控靶等方面取得的重要进展,并评述了脉冲磁控模式和基于闭合磁场直流<span style=\"color:red\">磁控溅射</span>沉积涂层的结构区域模型.直流非平衡<span style=\"color:red\">磁控溅射</span>是直流<span style=\"color:red\">磁控溅射</span>技术中的重要里程碑,使<span style=\"color:red\">磁控溅射</span>技术直接过渡到离子镀阶段,而脉冲<span style=\"color:red\">磁控溅射</span>技术为稳定沉积高质量的非导电涂层作出了重要的贡献.","authors":[{"authorName":"石永敬","id":"dc65f4d6-59ca-437e-bba3-d5640dbb9d1f","originalAuthorName":"石永敬"},{"authorName":"龙思远","id":"f16c9c4d-fcb9-4094-89b6-88001d0801bb","originalAuthorName":"龙思远"},{"authorName":"王杰","id":"219b090e-30d1-4d03-b3d5-d1674bf91224","originalAuthorName":"王杰"},{"authorName":"潘复生","id":"2dc2b294-5086-45d4-9c28-5b96ac4cd29e","originalAuthorName":"潘复生"}],"doi":"","fpage":"65","id":"30112ccd-bd9e-4752-be6e-a65bf1330bf1","issue":"1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"ff4ee4b3-2146-4a75-ac59-35c256624d29","keyword":"<span style=\"color:red\">磁控溅射</span>","originalKeyword":"磁控溅射"},{"id":"81ea0ce7-c96d-4f35-a11e-b0d9c3b23537","keyword":"非平衡闭合磁场","originalKeyword":"非平衡闭合磁场"},{"id":"284b3235-8247-4cb9-8fcf-be717dd5c69c","keyword":"脉冲","originalKeyword":"脉冲"},{"id":"f7f8b5f4-ae62-4811-a16e-3299abd90143","keyword":"薄膜结构","originalKeyword":"薄膜结构"}],"language":"zh","publisherId":"cldb200801017","title":"直流<span style=\"color:red\">磁控溅射</span>研究进展","volume":"22","year":"2008"},{"abstractinfo":"主要简介了<span style=\"color:red\">磁控溅射</span>技术的基本原理、基本装置、近年来出现的新技术(多靶<span style=\"color:red\">磁控溅射</span>技术、磁场扫描法、非平衡<span style=\"color:red\">磁控溅射</span>、脉冲<span style=\"color:red\">磁控溅射</span>技术、<span style=\"color:red\">磁控溅射</span>技术与其它成膜技术相结合等),以及国内外利用<span style=\"color:red\">磁控溅射</span>技术在多层膜和化合物薄膜制备方面取得的一些成果.","authors":[{"authorName":"张继成","id":"b73b6d10-c6c7-468a-bd48-b7cffc38ee17","originalAuthorName":"张继成"},{"authorName":"吴卫东","id":"90364d1f-836b-4858-8b37-a45bbb111fb4","originalAuthorName":"吴卫东"},{"authorName":"许华","id":"615b864b-55aa-47b9-826d-2b08239691c5","originalAuthorName":"许华"},{"authorName":"唐晓红","id":"4ea0b65e-4f15-4875-8666-7f7822696c29","originalAuthorName":"唐晓红"}],"doi":"","fpage":"56","id":"d28a5d65-8ca7-42fb-a3d8-9566c679a3e2","issue":"4","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"b48b5cb1-16a2-4e57-8485-9261e285a151","keyword":"<span style=\"color:red\">磁控溅射</span>","originalKeyword":"磁控溅射"},{"id":"c21e3b3c-2055-42b9-91a2-52fdef8d5bd9","keyword":"<span style=\"color:red\">磁控溅射</span>新技术","originalKeyword":"磁控溅射新技术"},{"id":"022dcd84-e16a-4104-9cfc-309df04ec462","keyword":"薄膜制备","originalKeyword":"薄膜制备"}],"language":"zh","publisherId":"cldb200404017","title":"<span style=\"color:red\">磁控溅射</span>技术新进展及应用","volume":"18","year":"2004"},{"abstractinfo":"利用射频<span style=\"color:red\">磁控溅射</span>法低温制备铟锡氧化物薄膜,主要研究了氧氩流量比、<span style=\"color:red\">溅射</span>功率、<span style=\"color:red\">溅射</span>压强、沉积温度和靶基距等工艺参数对ITO薄膜结构和光电性能的影响.在优化的沉积条件即氧氩流量比0.1/25、<span style=\"color:red\">溅射</span>功率210W、<span style=\"color:red\">溅射</span>压强0.2 Pa、靶基距2.0 cm和衬底为100℃的低温下制备的ITO薄膜电阻率为7.3×10-4Ω·cm、可见光范围内平均透光率为89.4％.在氩气气氛中200℃低温退火60 min后,ITO薄膜的电阻率降为3.8 ×10-4Ω·cm,透光率不变.","authors":[{"authorName":"王秀娟","id":"e3cc4225-6416-4708-b190-6ed47109940d","originalAuthorName":"王秀娟"},{"authorName":"司嘉乐","id":"b0de8b01-8124-45e8-8b06-f2619958c4fc","originalAuthorName":"司嘉乐"},{"authorName":"杨德林","id":"3be9356f-5515-4a39-9837-4e7a2f5c22bb","originalAuthorName":"杨德林"},{"authorName":"谷锦华","id":"27cfda2f-bf9c-4df8-a444-b5d610a07702","originalAuthorName":"谷锦华"},{"authorName":"卢景霄","id":"c97e81e9-fed6-405f-bd60-c7d90618eef4","originalAuthorName":"卢景霄"}],"doi":"","fpage":"1516","id":"c86439cc-95fd-457b-b90e-104c03b27177","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"ab8e035e-c73b-40cb-bb75-d211ac905336","keyword":"ITO薄膜","originalKeyword":"ITO薄膜"},{"id":"cd1d89dd-de33-4eb6-8e94-9c50012f9596","keyword":"射频<span style=\"color:red\">磁控溅射</span>","originalKeyword":"射频磁控溅射"},{"id":"638c2c4f-aeee-4a22-b61d-7adceddb190e","keyword":"电阻率","originalKeyword":"电阻率"}],"language":"zh","publisherId":"rgjtxb98201506017","title":"射频<span style=\"color:red\">磁控溅射</span>低温制备ITO薄膜","volume":"44","year":"2015"},{"abstractinfo":"采用直流<span style=\"color:red\">磁控溅射</span>方法在室温下玻璃基板上制备ITO(Indium tin oxide)薄膜,并在真空中不同温度(100℃～400℃)下退火处理.研究了退火对薄膜表面形貌、电光特性的影响.XRD测试发现薄膜在200℃退火后结晶,优选晶向为(222).随退火温度升高,方块电阻迅速下降,表面更加平整,薄膜在可见光范围平均透过率提高到85%.","authors":[{"authorName":"王军","id":"065b088b-306e-432a-9b88-bed0e4fc6b86","originalAuthorName":"王军"},{"authorName":"成建波","id":"b38a7f68-bf37-4419-b1c3-8dd2dac416fa","originalAuthorName":"成建波"},{"authorName":"陈文彬","id":"3eecb2d1-5068-4bd5-912a-2e3b6fa5a0a3","originalAuthorName":"陈文彬"},{"authorName":"杨刚","id":"07e9e1ff-5bba-48fc-899f-c110d5385825","originalAuthorName":"杨刚"},{"authorName":"蒋亚东","id":"d2d2ba66-a243-455b-8ede-957653f84c8e","originalAuthorName":"蒋亚东"},{"authorName":"蒋泉","id":"47cb3072-de3a-4e3a-b457-157b29d7a69a","originalAuthorName":"蒋泉"},{"authorName":"杨健君","id":"8880363a-7d86-407c-86e7-5a45882e5b14","originalAuthorName":"杨健君"}],"doi":"10.3969/j.issn.1005-0299.2008.02.029","fpage":"264","id":"95021558-1111-4b40-8c6a-3a1a21948e4a","issue":"2","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"d0b62bb6-d811-4062-9e45-5c311e20ac7b","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"2c2c3a2b-27be-412d-9f05-45add2362350","keyword":"氧化铟锡(ITO)","originalKeyword":"氧化铟锡(ITO)"},{"id":"5592797e-daf4-4268-ad84-6b9784370b1c","keyword":"退火","originalKeyword":"退火"},{"id":"f91e7bc1-3102-47ec-b72c-075004b614b9","keyword":"直流<span style=\"color:red\">磁控溅射</span>","originalKeyword":"直流磁控溅射"},{"id":"83b18ee1-01f3-4f40-80f5-be52f679bb11","keyword":"方阻","originalKeyword":"方阻"}],"language":"zh","publisherId":"clkxygy200802029","title":"<span style=\"color:red\">磁控溅射</span>ITO薄膜的退火处理","volume":"16","year":"2008"},{"abstractinfo":"利用直流<span style=\"color:red\">磁控溅射</span>法在室温水冷玻璃衬底上制备出了高质量的钛镓共掺杂氧化锌(TGZO)透明导电薄膜.研究了<span style=\"color:red\">溅射</span>功率对TGZO薄膜结构、形貌和光电性能的影响.研究结果表明:<span style=\"color:red\">溅射</span>功率对TGZO薄膜的结构和电阻率有重要影响.X射线衍射分析表明,TGZO 薄膜为六角纤锌矿结构的多晶薄膜,且具有c<span style=\"color:red\">轴</span>择优取向.在<span style=\"color:red\">溅射</span>功率为120 W时,实验获得的TGZO薄膜的方块电阻为2.71 Ω/□,此时电阻率具有最小值2.18×10-4 Ω·cm.实验制备的TGZO 薄膜在可见光区范围内平均透过率达到了90%以上.","authors":[{"authorName":"史晓菲","id":"9668c210-abc9-42fb-906d-dd96fb11275a","originalAuthorName":"史晓菲"},{"authorName":"郭美霞","id":"f1c91d8b-89d2-4a0c-9226-76c0a9fb90a6","originalAuthorName":"郭美霞"},{"authorName":"刘汉法","id":"b2ce9071-4058-4d8d-814b-9eac5b4e0e23","originalAuthorName":"刘汉法"},{"authorName":"王新峰","id":"93afd0b9-8a66-497e-9508-01bd90455762","originalAuthorName":"王新峰"}],"doi":"","fpage":"972","id":"5462ad56-cfb3-4bf9-b5d0-0dae2c995364","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"85a5fb0f-a36d-49ba-af5e-ded1cc812ce5","keyword":"TGZO薄膜","originalKeyword":"TGZO薄膜"},{"id":"7f39c53c-e226-4e0f-877a-bc7e4d24740a","keyword":"透明导电薄膜","originalKeyword":"透明导电薄膜"},{"id":"d316257c-2a99-4391-a7b3-f577fea4e7a9","keyword":"<span style=\"color:red\">溅射</span>功率","originalKeyword":"溅射功率"},{"id":"a0eed295-49c2-4f0f-8961-ff17fea018d3","keyword":"<span style=\"color:red\">磁控溅射</span>","originalKeyword":"磁控溅射"}],"language":"zh","publisherId":"rgjtxb98201004029","title":"<span style=\"color:red\">溅射</span>功率对直流<span style=\"color:red\">磁控溅射</span>法沉积TGZO薄膜性能的影响","volume":"39","year":"2010"},{"abstractinfo":"采用射频<span style=\"color:red\">磁控溅射</span>工艺，以高密度氧化锌铝陶瓷靶为靶材，衬底温度控制在室温，在玻璃基底上制备了透明导电 ZnO∶Al(ZAO)薄膜.利用 X 射线衍射仪(XRD)、原子力显微镜(AFM)、紫外-可见光谱仪和范德堡法，系统研究了不同<span style=\"color:red\">溅射</span>功率对薄膜的结构、形貌及光电特性的影响.结果表明，不同<span style=\"color:red\">溅射</span>功率对薄膜的光透射率影响不大，而对薄膜结晶和电学性能影响较大.XRD 表明薄膜为良好的 c <span style=\"color:red\">轴</span>择优取向；可见光区(400~600 nm)平均透过率达到85％以上；在120 W 下沉积的薄膜电学性能达到了最佳.","authors":[{"authorName":"高立华","id":"a0d6271c-2158-43bc-a76d-a8a7f36a1942","originalAuthorName":"高立华"},{"authorName":"郑玉婴","id":"a3834922-93b9-4a08-acb2-e8ac8d186910","originalAuthorName":"郑玉婴"}],"doi":"10.3969/j.issn.1001-9731.2015.08.006","fpage":"8028","id":"5e0c6be6-d5f3-46ca-b636-a75ce671cf9c","issue":"8","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"259e6d0e-da4e-4289-9dfc-b1ac16ad5cab","keyword":"ZAO 薄膜","originalKeyword":"ZAO 薄膜"},{"id":"acb7d257-db93-4bd6-8ca1-5121e9e673bd","keyword":"<span style=\"color:red\">溅射</span>功率","originalKeyword":"溅射功率"},{"id":"257be17a-6060-43e3-bb6d-72a868b0c3e8","keyword":"方块电阻","originalKeyword":"方块电阻"},{"id":"63b3c4da-6641-497b-b843-d9e95b1fef55","keyword":"透过率","originalKeyword":"透过率"}],"language":"zh","publisherId":"gncl201508006","title":"<span style=\"color:red\">溅射</span>功率对<span style=\"color:red\">磁控溅射</span>ZnO∶Al（ZAO）薄膜性能的影响","volume":"","year":"2015"},{"abstractinfo":"用射频<span style=\"color:red\">磁控溅射</span>技术,在纯氩气氛中不同<span style=\"color:red\">溅射</span>功率(120W～210W)下于玻璃衬底上制备了Al掺杂ZnO(ZAO)薄膜.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、光谱仪和四探针测试仪等对所制备的薄膜进行了晶体结构、光学和电学性能分析.结果表明,纯氩气氛中不同<span style=\"color:red\">溅射</span>功率下玻璃衬底上原位沉积的ZAO薄膜具有明显的c<span style=\"color:red\">轴</span>择优取向性,它没有改变ZnO的六角纤锌矿结构;ZAO薄膜的可见光区平均透光率不强烈依赖于<span style=\"color:red\">溅射</span>功率,为75%左右;原位沉积ZAO薄膜的电阻率达到102Ω·cm数量级范围,随<span style=\"color:red\">溅射</span>功率由120 W增大到210 W时,薄膜电阻率从132.67 Ω·cm降低到21.08 Ω·cm.","authors":[{"authorName":"汪冬梅","id":"89876889-69e3-4560-ad70-092241a6f38a","originalAuthorName":"汪冬梅"},{"authorName":"周海波","id":"ed956b82-2a6b-4489-bcf3-ec4ac695a991","originalAuthorName":"周海波"},{"authorName":"朱晓勇","id":"50ea40ec-68f7-46cb-a1e7-36cec44de939","originalAuthorName":"朱晓勇"},{"authorName":"吕珺","id":"b7afb692-10d3-4e26-bb59-888dc53237e4","originalAuthorName":"吕珺"},{"authorName":"徐光青","id":"a756bc48-c543-473d-b5f3-fd400ef2c04d","originalAuthorName":"徐光青"},{"authorName":"吴玉程","id":"0c58ff74-954b-4870-9cbf-144899b5e798","originalAuthorName":"吴玉程"},{"authorName":"郑治祥","id":"a3bc8d03-6d03-4aa8-ad55-1c7241d4d579","originalAuthorName":"郑治祥"}],"doi":"","fpage":"57","id":"b69355fc-57a7-463f-a011-d8c5b32cd95f","issue":"3","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"3c2477a5-e261-4b44-a272-1622887769ac","keyword":"ZAO薄膜","originalKeyword":"ZAO薄膜"},{"id":"8c39d37a-dc0e-4795-9c57-b9986d2769e4","keyword":"RF<span style=\"color:red\">磁控溅射</span>","originalKeyword":"RF磁控溅射"},{"id":"c4025f3f-d00d-4f35-ac5b-b9b6602eac3f","keyword":"结构性能","originalKeyword":"结构性能"},{"id":"3b828860-7f82-4962-95e4-d7b2b2abe45e","keyword":"可见光透过率","originalKeyword":"可见光透过率"},{"id":"1a3d97af-ad09-401e-969b-16e267a29ede","keyword":"电阻率","originalKeyword":"电阻率"}],"language":"zh","publisherId":"jsgncl201003014","title":"<span style=\"color:red\">溅射</span>功率对射频<span style=\"color:red\">磁控溅射</span>Al掺杂ZnO(ZAO)薄膜性能的影响","volume":"17","year":"2010"},{"abstractinfo":"纳米硅薄膜具有卓越的光学和电学特性,其在光电器件方面潜在的应用越来越引起人们的兴趣.讨论了用<span style=\"color:red\">磁控溅射</span>法制备纳米硅薄膜的微观机理及沉积参数对薄膜结构和性能的影响.其中,氢气分压、基片温度、<span style=\"color:red\">溅射</span>功率是<span style=\"color:red\">磁控溅射</span>法沉积纳米硅的关键参数,适当的温度、较高的氢气分压和较低的<span style=\"color:red\">溅射</span>功率有利于纳米硅的生成.","authors":[{"authorName":"刘本锋","id":"a0026f2e-6bad-4f8d-9bc8-42209feac670","originalAuthorName":"刘本锋"},{"authorName":"赵青南","id":"111a97b9-a306-4695-b6b9-85dd275bc9f3","originalAuthorName":"赵青南"},{"authorName":"潘震","id":"00c1557c-f869-4f89-b2e6-826b3ffb0d52","originalAuthorName":"潘震"},{"authorName":"冯敏鸽","id":"1f869581-8168-4da9-94a9-2c6e86dc8aef","originalAuthorName":"冯敏鸽"}],"doi":"","fpage":"30","id":"a57c9eb6-56b3-4f2b-bcbc-2a43ce1aef7c","issue":"23","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"3a0e1f42-44a9-43bf-9c05-4dd705978c0e","keyword":"纳米硅","originalKeyword":"纳米硅"},{"id":"561c2939-a0e9-472f-978a-1387aafc265e","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"033437bf-9c39-4e19-9812-6c7bd0494252","keyword":"<span style=\"color:red\">磁控溅射</span>","originalKeyword":"磁控溅射"}],"language":"zh","publisherId":"cldb200923007","title":"纳米硅薄膜及<span style=\"color:red\">磁控溅射</span>法沉积","volume":"12","year":"2009"}],"totalpage":911,"totalrecord":9104}