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介绍了紫外光探测器的发展背景、基本工作原理,并从光导型和光伏型探测器两个方面综述了近10年来Ga2O3基探测器的研究现状.重点介绍了材料制备、掺杂等工艺参数对其紫外光探测性能的影响以及存在的问题,并对以后的研究工作进行了展望.

参考文献

[1] Jean-Jacques D;Li Y B;Tokizono T.Wide-bandgap nanowires for UV-light detection[J].SPIE Newsroom,2011
[2] Weng W Y;Hsueh T J;Chang S J et al.Growth of Ga2O3 nanowires and the fabrication of solar-blind photodetector[J].IEEE Trans Nanotechn,2011,10(05):1047.
[3] Fleischer M;Hollbauer L;Meixner H .Effect of the sensor structure on the stability of Ga2O3 sensors for reducing gases[J].Sens Actuators B:Chem,1994,18(1-3):119.
[4] Minami T;Yamada H;Kubota Y et al.Mn-Activated CaOGa2O3 phosphors for thin film electroluminescent devices[J].Japanese Journal of Applied Physics,1997,36:1191.
[5] Ueda N;Hosono H;Waseda R;Kawazoe H;TOKYO INST TECHNOL MAT & STRUCT LAB TOKYO 152 JAPAN. .Synthesis and control of conductivity of ultraviolet transmitting beta-Ga2O3 single crystals[J].Applied physics letters,1997(26):3561-3563.
[6] Kosuke Matsuzaki;Hiroshi Yanagi;Toshio Kamiya;Hidenori Hiramatsu;Kenji Nomura;Masahiro Hirano;Hideo Hosono .Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga_(2)O_(3)[J].Applied physics letters,2006(9):092106-1-092106-3-0.
[7] Tu BZ.;Cui QL.;Xu P.;Wang X.;Gao W.;Wang CX.;Liu J.;Zou GT. .The pressure-induced phase transition of Ga2O3[J].Journal of Physics. Condensed Matter,2002(44):10627-10630.
[8] P. Feng;J. Y. Zhang;Q. H. Li;T. H. Wang .Individual β-Ga_2O_3 nanowires as solar-blind photodetectors[J].Applied physics letters,2006(15):153107.1-153107.3.
[9] 季振国,杜娟,范镓,王玮,孙兰侠,何作鹏.溶胶-凝胶提拉法制备光导型日盲区紫外探测器[J].稀有金属材料与工程,2004(z1):298-300.
[10] Takayoshi Oshima;Takeya Okuno;Shizuo Fujita .Ga_2O_3 Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors[J].Japanese journal of applied physics,2007(11):7217-7220.
[11] Yoshihiro Kokubun;Kasumi Miura;Fumie Endo;Shinji Nakagomi .Sol-gel prepared β-Ga_2O_3 thin films for ultraviolet photodetectors[J].Applied physics letters,2007(3):031912.1-031912.3.
[12] Weng W Y;Hsueh T J;Chang S J et al.A β-Ga2 O3 solarblind photodetector prepared by furnace oxidization of GaN thin film[J].IEEE SENSORS JOURNAL,2011,11(04):999.
[13] Oshima T;Okuno T;Arai N et al.Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates[J].Appl Phys Express,2008,1:011202.
[14] Suzuki R;Nakagomi S;Kokubun Y et al.Enhancement of responsivity in solar blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing[J].Applied Physics Letters,2009,94(22):222102.
[15] Weng, W.Y.;Hsueh, T.J.;Chang, S.J.;Huang, G.J.;Hsueh, H.T. .A -Ga O /GaN Schottky-Barrier Photodetector[J].IEEE Photonics Technology Letters,2011(7):444-446.
[16] W. Y. Weng;T. J. Hsueh;S. J. Chang;S. C. Hung;G. J. Huang;H. T. Hsueh;Z. D. Huang;C. J. Chiu .An (Al_(x)Ga_(1-x))_(2)O_(3) Metal-Semiconductor-Metal VUV Photodetector[J].IEEE sensors journal,2011(9):1795-1799.
[17] Y.C. Lin;S.J. Chang;Y.K. Su;T.Y. Tsai;C.S. Chang;S.C. Shei;C.W. Kuo;S.C. Chen .InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts[J].Solid-State Electronics,2003(5):849-853.
[18] S. J. Chang;C. H. Chen;P. C. Chang;Y. K. Su;P. C. Chen;Y. D. Jhou;H. Hung;S. M. Wang;B. R. Huang .Nitride-Based LEDs With p-InGaN Capping Layer[J].IEEE Transactions on Electron Devices,2003(12):2567-2570.
[19] Wu L W;Chang S J;Su Y K et al.In0.23 Ga0.77/GaN MQW LEDs with a low temperature GaN cap layer[J].Solid-State Electronics,2003,47(11):2027.
[20] Kokubun, Y.;Abe, T.;Nakagomi, S. .Sol-gel prepared (Ga_(1-x)In_x)_2O_3 thin films for solar-blind ultraviolet photodetectors[J].Physica Status Solidi, A. Applied Research,2010(7):1741-1745.
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