Si材料表面形成纳米化图案是制作新型硅基纳米电子器件、光电子器件等的基础和前提.根据不同需要,在纳米图案化Si衬底表面淀积不同功能纳米材料则能将成熟Si平面工艺技术的优势与纳米材料的新功能优势结合起来而制作出性能优良的Si基纳电子和光电子器件.介绍了具有纳米图案化表面Si材料在晶格失配较大Ⅲ-Ⅴ族材料外延制备上的应用,综述了各种Si衬底材料表面纳米图案化制作技术.
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