欢迎登录材料期刊网

材料期刊网

高级检索

在NiE(E=S,Se)纳米粒子辅助下,采用CVD方法,在NiE(E=S,Se)-Zn系统中成功生长出立方闪锌矿结构一维ZnE(E=S,Se)纳米线.生长的ZnSe和ZnS纳米线长度达几十微米,具有接近理想化学计量比的成分和较高的结晶质量.研究表明,ZnE纳米线生长过程中,ZnNi合金充作实际的催化剂,生长遵循氧化还原反应助VLS机理.基于此机理,通过调控NiE纳米粒子的尺寸可以有效控制ZnE纳米线的直径.

参考文献

[1] Haase M A;Qiu J;DePuydt J M et al.[J].Applied Physics Letters,1991,59(11):1272.
[2] Pelegrini V;Colombell R;Carusotto L et al.[J].Applied Physics Letters,1999,74(14):1945.
[3] Lin TK;Chang SJ;Su YK;Chiou YZ;Wang CK;Chang SP;Chang CM;Tang JJ;Huang BR .ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2005(2):202-205.
[4] Eissler E.E.;Lynn K.G. .Properties of melt-grown ZnSe solid-state radiation detectors[J].IEEE Transactions on Nuclear Science,1995(4):663-667.
[5] Ruitao Lv;Cao C;Zhai H .[J].Solid State Communications,2004,130:241.
[6] Fan H J .[J].Small,2006,2(06):700.
[7] Chan SK;Cai Y;Sou IK;Wang N .MBE-grown Au-island-catalyzed ZnSe nanowires[J].Journal of Crystal Growth,2005(1/4):146-150.
[8] Zhu Ying-Chun;Bando Yoshio .[J].Chemical Physics Letters,2003,377:367.
[9] Wang Wenzhong;Geng Yan;Yan Ping et al.[J].Inor Chem Comm,1999,82:83.
[10] Zhang X T;Lp K M;Li Quan .[J].Applied Physics Letters,2005,86:203114.
[11] Zhang X M;Wang C;Xie Y et al.[J].Materials Research Bulletin,1999,34:1967.
[12] Liu Yuanfang;Cao Jinbo;Li Cun et al.[J].Journal of Crystal Growth,2004,261:508.
[13] Liu Q X;Wang C X;Xu N S et al.[J].Physical Review B,2005,72:085417.
[14] Li Huanyong;Jie Wanqi .[J].Journal of Crystal Growth,2003,257:110.
[15] Gezci S;Woods J .[J].Journal of Applied Physics,1980,51(03):1866.
[16] Amal K Ghosh Jr .[J].Journal of Applied Physics,1973,44(10):4431.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%