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在高温高压下合成方钴矿结构热电材料Ba0.32CO4Sb12-xTex(0.1≤x≤0.9),测试了样品的微观结构和室温电学性质.结果表明:Ba填充Te置换型方钴矿Ba0.32Co4Sb12-xTex为n型半导体;在不同压力下,随着Te填充分数的增加.Seebeck系数的绝对值和电阻率均呈降低趋势,功率因子显著提高.在1.5 GPa、900 K条件下合成的Ba0.32CO4Sb11.9Te0.1化合物功率因子达到最大值(9.7μWcm-1K-2).

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