射频溅射ZnO作为GaN厚膜生长缓冲层的工艺研究

功能材料, 2011, 42(2): 322-324.

射频溅射ZnO作为GaN厚膜生长缓冲层的工艺研究

王如 ^1, , 杨瑞霞 ^2, , 张俊玲 ^3, , 徐永宽 ^4,

1.河北工业大学,信息工程学院,天津,300401

2.河北工业大学,信息工程学院,天津,300401

3.天津大学管理与经济学部,天津,300402

4.中国电子科技集团第46研究所,天津,300220

基金项目: 国家自然科学基金资助项目(61076004) 河北省自然科学基金资助项目(E2009000050) 国家高技术研究发展计划(863计划)资助项目(2006AA03A144)

关键词： ZnO缓冲层 , 晶格失配 , 三维岛状生长 , 射频磁控溅射

Process research of RF-ZnO buffer layer for thick GaN film growth

采用射频磁控溅射法制备出了适用于HVPE-GaN厚膜生长的ZnO缓冲层,利用X射线衍射(XRD)和原子力显微镜(AFM)和光致发光(PL)等分析方法表征了ZnO缓冲层以及HVPE-GaN厚膜的晶体性能.实验结果表明,采用溅射功率为60W、氩气压强为2.0Pa、蓝宝石衬底为室温条件下的溅射工艺获得了(0002)单一取向、晶界清晰、晶粒尺寸均一的ZnO薄膜,以它为缓冲层获得的GaN厚膜XRD的(0002)衍射峰半高宽(FWHM)为265secarc,室温PL谱未见明显黄光发射带.

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射频溅射ZnO作为GaN厚膜生长缓冲层的工艺研究

Process research of RF-ZnO buffer layer for thick GaN film growth

参考文献