本文中应用全部PECVD工艺沉积a-SiOx:H、a-SiNx:H,和a-SiOx:H/a-SiNx:H叠层系统,比较了不同钝化膜对多晶硅太阳能电池发射极和背面钝化效果,应用FGA、RTP等热处理方法对钝化膜进行处理,重点讨论了FGA(Forming gas annealing)温度和时间的长短对钝化的影响.结果表明:低温FGA对只有单面钝化膜的硅片钝化效果不明显,而在800 ℃下FGA有明显作用,而且钝化效果随着时间的增加呈现出先增大后减小然后再增大的现象;退火后降温环境中是否有H和降温时间对钝化效果有很大的影响,但是对于双面膜无论FGA温度高低对钝化都有帮助,文中对上述现象做了合理的解释.最后利用双面叠层钝化膜经过FGA处理后得到的多晶硅片的少子寿命达到14.2 μs,比镀膜之前的3.0 μs提高了11.2 μs,使多晶硅太阳能电池暗电压 Voc达到630 mV.
参考文献
| [1] | AberleA G.Crystalline Silicon Solar Cells:Advanced Surface Passivation and Analysis[M].The University of New South Wales,Sydney,Austrlia,1999 |
| [2] | GreenM A.Solar cells:Operating Principles,Technology and System Applications[M].The University of New South Wales,Sydney,Austrlia,1998 |
| [3] | GlunzS W;Rein S;Warta W.On the Degradation of Cz-silicon Solar Cells[A].Vienna,Austrlia,1998:1343-1346. |
| [4] | Hussam Eldin A.Elgamel .High efficiency polycrystalline silicon solar cells using low temperature PECVD process[J].IEEE Transactions on Electron Devices,1998(10):2131-2137. |
| [5] | Weber J H;Deenapanray K J;P N K et al.Hydrogen Reintroduction by Forming Gas Annealing to LPCVD Silicon Nitride Coated Structures[J].Journal of the Electrochemical Society,2006,153:750. |
| [6] | Mac Hofmann;Stephan Kambor.Firing Stable Surface Passivation Using all-PECVD Stack of SiOx:H and SiNx:H[A].Milan,Italy,2007:1030-1033. |
| [7] | McCann;Stocks M;Weber M J.Oxide /LPCVD Nitride Stacks on Silicon:The Effects of High Temperature Treatments on Bulk Lifetime and on Surface Passivation[A].Munich,2001:347-352. |
| [8] | Mac Hofmann;Schneiderlochner E;Wolke W.Silicon nitride-silicon oxide stacks for solar cell rear side passivation[A].France:Paris,2004:1037-1040. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%