用MOCVD 技术在(0001)蓝宝石衬底上成功研制了2寸衬底上无裂纹的AlN/Al0.3Ga0.7N超晶格材料.研究了AlxGa1-xN/AlN超晶格材料特性. 结果表明,缓冲层材料和结构对AlN/Al0.3Ga0.7N超晶格的表面型貌和界面特性有很大的影响.AFM研究表明利用GaN做支撑层生长的AlN/Al0.3Ga0.7N超晶格材料是一种准二维生长模式.XRD和SEM研究表明研制的材料表面平整、界面清晰、并且材料具有完整的周期重复性.利用紫外-可见光谱仪反射谱研究表明研制的30对AlN/Al0.3Ga0.7N超晶格材料在中心波长为313nm的紫外波段具有93.5%的反射率.
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