欢迎登录材料期刊网

材料期刊网

高级检索

以高纯的Zn、Mg以及Se2单质为生长原料,加入高纯的碘单质作为反应输运剂,采用化学气相输运(CVT)方法成功制备了ZnMgSe单晶,并且分别采用X射线衍射、双晶衍射、紫外可见分光光度计、红外光谱仪以及光致发光(PL)技术研究了晶体的结构、结晶质量以及光学性质.结果表明,制备的单晶结晶性能良好,在500 ~ 1500 nm波长范围内的透过率接近50%,在400 ~ 4000 cm-1波长范围内的透过率达到42%,在2.0~2.6 eV范围内有三个明显的空位与杂质发光带.以Zn、Mg及Se2单质为生长原料,在输运剂I2的帮助下可以实现ZnMgSe单晶的生长.

参考文献

[1] Zhang B P;Manh L H;Wakatsuki K et al.Growth and Characterization of ZnMgSe Alloys and ZnSe/ZnMgSe Multi-Quantum Wells[J].Physical Status Solidi,2002,1(229):197-201.
[2] Yu.A.Zagoruiko;N.O.Kovalenko;O.A.Fedorenko;A.G.Fedorov;P.V.Mateychenko .Zn_(1-x)Mg_xSe single crystals as a functional material for optoelectronics[J].Functional materials,2005(4):731-734.
[3] Firszt F.;Sekulska B.;Szatkowski J.;Paszkowicz W. Kachniarz J.;Meczynska H. .COMPOSITION DEPENDENCE OF THE UNIT CELL DIMENSIONS AND THE ENERGY GAP IN ZN1-XMGXSE CRYSTALS[J].Semiconductor Science and Technology,1995(2):197-200.
[4] Derkowska B;Sahraoui B;Nguyen Phu X et al.Study of Linear Optical Properties and Two-photons Absorption in ZnMgSe Thin Layers[J].Optical Materials,2000,15:199-203.
[5] Huang DM.;Wei YF.;Liu XH.;Wang J.;Wang X.;Chen ZG.;Lu W.;Wang XG. .Structural and optical properties of Zn1-xMgxSe alloys grown on GaAs(001) substrates by molecular beam epitaxy[J].Journal of Crystal Growth,1998(0):1085-1089.
[6] Maruyama K J;Suto K et al.Segregation Coefficient of Beryllium in Traveling-Solvent-Grown BeyZn1-yTex Bulk Crystals Using Tellurium Solution[J].Applied Physics Letters,1999,22(74):3335-3337.
[7] Dohnke I.;Neumann W.;Mulhberg M. .ZnSe single-crystal growth with SnSe as solvent[J].Journal of Crystal Growth,1999(Pt.1):287-291.
[8] Carlo Paorici;Giovanni Attolini .Vapour growth of bulk crystals by PVT and CVT[J].Progress in Crystal Growth and Characterization of Materials,2004(0):2-41.
[9] Ching-Hua Su;M.A. George;W. Palosz .Contactless growth of ZnSe single crystals by physical vapor transport[J].Journal of Crystal Growth,2000(3/4):267-275.
[10] Fang CS.;Wei JQ.;Pan QW.;Shi W.;Wang JY.;Gu QT. .Growth of ZnSe single crystals[J].Journal of Crystal Growth,2000(2/3):542-546.
[11] Fujiwara S.;Kotani T.;Matsumoto K.;Shirakawa T.;Morishita H. .Growth of large ZnSe single crystal by CVT method[J].Journal of Crystal Growth,1998(1/2):60-66.
[12] Huanyong Li;Wanqi Jie .Growth and characterizations of bulk ZnSe single crystal by chemical vapor transport[J].Journal of Crystal Growth,2003(1/2):110-115.
[13] 刘长友,介万奇.ZnSe单晶CVT法生长与系统优化[J].无机材料学报,2008(04):855-859.
[14] Korostelin YV.;Nasibov AS.;Shapkin PV.;Kozlovsky VI. .Vapour growth and doping of ZnSe single crystals[J].Journal of Crystal Growth,1999(3):449-454.
[15] 顾庆天.高质量ZnSe单晶的研究[J].人工晶体学报,1998(03):237.
[16] Jobst B;Hommel D et al.EO Band-gap Energy and Lattice Constant of Ternary Zn1-xMgx Se as Functions of Composition[J].Applied Physics Letters,1996,69(01):97-99.
[17] 李焕勇 .ZnSe晶体的气相生长与光电特性研究[D].西北工业大学,2003.
[18] 孙以材.半导体测试技术[M].北京:冶金工业出版社,2005
[19] Bukaluk A.;Trzcinski A.;Firszt F.;Legowski S.;Meczynska H. .Auger depth profile analysis and photoluminescence investigations of Zn1-xMgxSe alloys[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,2002(0):175-180.
[20] Firszt F.;Meczynska H.;Oczkowski HL.;Osinska W. Szatkowski J.;Paszkowicz W.;Spolnik ZM.;Legowski S. .LUMINESCENCE OF ZN1-XMGXSE, ZN1-XMGXSE-AL AND ZN1-XMGXSE-I MIXED CRYSTALS GROWN BY BRIDGMAN METHOD[J].Journal of Crystal Growth,1996(1/4):167-170.
[21] Avdonin A N;Ivanova G N;Nedeoglo D D et al.Photoluminesence of Iodine-dopedcrystals of ZnSe[J].Journal of Applied Spectroscopy,2002,2(69):244-248.
[22] 方容川.固体光谱学[M].合肥:中国科学技术大学出版社,2001:57-161.
[23] 李文渭,李焕勇,介万奇.单质直接气相生长ZnSe单晶[J].人工晶体学报,2008(05):1051-1055.
[24] 田世俊,李焕勇.单质直接气相生长ZnMgSe单晶[J].人工晶体学报,2012(03):555-558,563.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%