Optimal Control of Oxygen Concentration in a Magnetic Czochralski Crystal Growth by Response Surface Methodology

材料科学技术（英文）, 2006, 22(2): 173-178.

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1.Numerical Simulation Center of Engineering, Beijing University of Technology, Beijing 100022, China

2.Numerical Simulation Center of Engineering, Beijing University of Technology, Beijing 100022, China

3.General Research Institute for Nonferrous Metals, Beijing 100088, China

4.General Research Institute for Nonferrous Metals, Beijing 100088, China

5.General Research Institute for Nonferrous Metals, Beijing 100088, China

基金项目: 北京工业大学校科研和教改项目(127-00227)

Optimal Control of Oxygen Concentration in a Magnetic Czochralski Crystal Growth by Response Surface Methodology

Keywords： Czochralski

Concepts and techniques of response surface methodology have been widely applied in many branches of engineering, especially in the chemical and manufacturing areas. This paper presents an application of the methodology in a magnetic crystal Czochralski growth system for single crystal silicon to optimize the oxygen concentration at the crystal growth interface in a cusp magnetic field. The simulation demonstrates that the response surface methodology is a feasible algorithm for the optimization of the Czochralski crystal growth process.

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Optimal Control of Oxygen Concentration in a Magnetic Czochralski Crystal Growth by Response Surface Methodology

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