综述了Ⅲ-V族稀磁半导体(Ga,Mn) As磁电性质的研究进展,尤其是(Ga,Mn)As单层膜和多层膜结构的磁电输运性质的详细研究状况.关于(Ga,Mn) As的结构与物理性质的信息可由单层膜的反常霍尔效应、平面霍尔效应、电阻对温度的依赖关系与磁阻各向异性等磁电输运性质测量得到;而多层膜中观察到的自旋阀效应、自旋相关散射与层间交互耦合等现象,对加深稀磁半导体的基本物性认识、拓展稀磁半导体的实际应用空间非常重要.最后总结并展望了(Ga,Mn) As未来的发展趋势.
参考文献
| [1] | New Materials for Semiconductor Spin-Electronics[J].Proceedings of the IEEE,2003(5):715-726. |
| [2] | Furdyna J K .Diluted magnetic semiconductors[J].Journal of Applied Physics,1988,64:R29. |
| [3] | Ohno H;Shen A;Matsukura F et al.(Ga,Mn)As:A new diluted magnetic semiconductor based on GaAs[J].Applied Physics Letters,1996,69:363. |
| [4] | Chen L;Yan S;Xu P F et al.Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature[J].Applied Physics Letters,2009,95:182505. |
| [5] | Chen, L.;Yang, X.;Yang, F.;Zhao, J.;Misuraca, J.;Xiong, P.;Von Molnár, S. .Enhancing the curie temperature of ferromagnetic semiconductor (Ga,Mn)As to 200 K via nanostructure engineering[J].Nano letters,2011(7):2584-2589. |
| [6] | Hurd C M;Chien C L;Westgate C R.The Hall effect and its applications[M].New York:Plenum,1980 |
| [7] | Matsukura F.;Shen A.;Sugawara Y.;Ohno H. .Transport properties and origin of ferromagnetism in (Ga,Mn)As[J].Physical Review.B.Condensed Matter,1998(4):R2037-R2040. |
| [8] | Omiya T;Matsukura F;Dietl T et al.Magnetotransport properties of (G a,Mn)As investigated at lowtemperature and high magneticeld[J].PHYSICA E,2000,7:976. |
| [9] | Tang HX.;Kawakami RK.;Awschalom DD.;Roukes ML. .Giant planar Hall effect in epitaxial (Ga,Mn)As devices - art. no. 107201[J].Physical review letters,2003(10):7201-0. |
| [10] | Jaehyuk Won;Jinsik Shin;Sangyeop Lee et al.Planar Hall effect in a single GaMnAs film grown on Si substrate[J].Journal of Crystal Growth,2012,12:62. |
| [11] | Shen A;OhnoH;Matsukura F et al.(Ga,Mn)As/GaAs diluted magnetic semiconductors superlattice structures prepared by molecular beam epitaxy[J].Japanese Journal of Applied Physics,1997,36:L73. |
| [12] | Xiang G;Sheu BL;Zhu M;Schiffer P;Samarth N .Noncollinear spin valve effect in ferromagnetic semiconductor trilayers[J].Physical review, B. Condensed matter and materials physics,2007(3):5324-1-5324-5-0. |
| [13] | Ge Z;Zhou Y Y;Cho Y J et al.Investigation of magnetic and electronic coupling between two (Ga,Mn) As layers in (Ga,Mn) As/GaAs/(Ga,Mn) As magnetic tunnel junctions[J].Applied Physics Letters,2007,91:152109. |
| [14] | Hakjoon Lee;Sunjae Chung;Sanghoon Lee;X. Liu;J. K. Furdyna .Magnetotransport properties of GaMnAs based trilayer structures with different thicknesses of InGaAs spacer layer[J].Journal of Applied Physics,2009(7):07C505-1-07C505-3-0. |
| [15] | Sanghoon Lee;Sunjae Chung;Sangyeop Lee et al.Magnetotransport properties of ferromagnetic semiconductor GaMnAs-basedsuperlattices[J].CURRENT APPLIED PHYSICS,2012,12:S31. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%