本文介绍高精度控制Si 膜厚度的电化学腐蚀自停止新技术。讨论光照和电极欧姆接触等对腐蚀特性的影响,以及所得Si 膜的质量。
Novel technique of electrochemical etch-stop for high-precision thicknesscontrol of silicon membrane was presented in this paper.The influences of light irradiationand ohm contact of electrode on etch characterization were discussed.Quality of the silicon
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