从阳极尺寸和结构设计、阴极被膜工艺改进,分析固体钽电容器的等效串联电阻(ESR)值的影响因素,提出了制造高频、低ESR值固体钽电解电容器的新工艺.投入10V/1001μF、10V/470μF两种规格产品,结果表明:阳极块厚度控制在1.5~2.1mm时,同一规格产品具有最小体积,接触电阻r金更小;在硝酸锰溶液中添加强氧化剂和表面活性荆,制得的MnO2层的r解更低;同时采用多芯并联结构,能使固体钽电解电容器的ESR值降低到通用钽电容器的ESR值的1/3~1/2,且100kHz时电容量变化值小于20%.
参考文献
[1] | Bispinck H;Ganschow O;Wie dmann L et al.Combined SIMS,AES,and XPS investigations of tantalum oxide layers[J].Applied Physics,1979,18(02):113. |
[2] | Lu Q .Anodie film growth on tantalum in dilute phosphoric acid solution at 20℃and 85℃[J].Electrochimica Acta,2002,47(17):2761. |
[3] | Prymak J D.New tantalum capacitors in power supply applica tions[A].,1998:1129. |
[4] | Yuan L J;Li Z C et al.Synthesis and characteriz-ation of activated MnO2[J].Materials Letters,2003,57(13-14):1945. |
[5] | Qu D Y .Application of a.c.impedance technique to the study of the proton diffusion process in the porous MnO2 electrode[J].Electrochimica Acta,2003,48:1675. |
[6] | Wang Chao;Fang Ling;Zhang Gong.Ⅰ-Ⅴ characteristics of tantalum oxide film and the effect of defects on its electrical properties[J].Thin Solid Films,2004(458):246. |
[7] | 陆胜,刘仲娥,梁正书,刘凌,阴学清.Ta2O5介质膜性能对液体钽电容器性能的影响[J].压电与声光,2006(04):475-477,480. |
[8] | Pringle J P S .Transport numbers of metal and oxygen during the anodic oxidation of tantalum[J].Electrochemical Society,1973,120(03):398. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%