讨论了对TiNi/Ti/SiO2/Si基板在HF+CuSO4中采用分离双电极方法的化学酸性镀铜.Si基板和TiNi/Ti/SiO2/Si基板分别作为化学镀的阳极和阴极,在开路条件下进行化学镀.最佳化学镀反应条件为电极相距0.5 mm,[HF]和[CuSO4]大于8%(质量分数)和0.045 mol/L.最后得到覆盖率高、晶粒大小均一、结构致密、具有<111>择优取向的Cu膜,且Cu膜中不含Cu2O,降低了电阻率.
参考文献
| [1] | Edelstein DC.;Mii YJ.;Saihalasz GA. .VLSI ON-CHIP INTERCONNECTION PERFORMANCE SIMULATIONS AND MEASUREMENTS[J].IBM journal of research and development,1995(4):383-401. |
| [2] | Zhang JY;Boyd I W .[J].Thin Solid Films,1998,318:234. |
| [3] | Brand F;Torres J;Palleau J;Mermet J L Mouche M J .[J].Applied Surface Science,1995,91:251. |
| [4] | Park KC.;Raaijmakers IJMM.;Ngan K.;Kim KB. .THE EFFECT OF DENSITY AND MICROSTRUCTURE ON THE PERFORMANCE OF TIN BARRIER FILMS IN CU METALLIZATION[J].Journal of Applied Physics,1996(10):5674-5681. |
| [5] | Wang M T et al.[J].Journal of the Electrochemical Society,1998,145:2538. |
| [6] | Ono H;Nakano T;Ohta T .[J].Applied Physics Letters,1994,64:1511. |
| [7] | 杨志刚,钟声.化学镀铜在超大规模集成电路中的应用和发展[J].功能材料,2004(z1):1049-1053. |
| [8] | Tseng W T;Lo C H;Lee S C .[J].Journal of the Electrochemical Society,2001,148:C327. |
| [9] | Tseng W T et al.[J].Journal of the Electrochemical Society,2001,148:C333. |
| [10] | Bertagna V.;Revel G.;Chemla M.;Rouelle F. .ELECTROCHEMICAL AND RADIOCHEMICAL STUDY OF COPPER CONTAMINATION MECHANISM FROM HF SOLUTIONS ONTO SILICON SUBSTRATES[J].Journal of the Electrochemical Society,1997(12):4175-4182. |
| [11] | Polignano M L;Giussani A;Caputo D;Clementi C Pavia G Priolo F .[J].Journal of the Electrochemical Society,2002,149:G429. |
| [12] | Liu C L;Cohen J;Adams J B;Voter A F .[J].Surface Science,1991,253:334. |
| [13] | Shacham-Diamand Y;Dubin V;Angyal M .[J].Thin Solid Films,1995,93:262. |
| [14] | Kim J J;Cha S H .[J].Japanese Journal of Applied Physics,2001,40:7151. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%