采用射频磁控共溅射方法制备了纳米Ge颗粒尺寸的Ge-SiO2薄膜、非晶Si-SiO2薄膜和非晶AlSiO复合薄膜,分析了样品的结构,研究发现3类样品均存在较强的光吸收,对于Ge-SiO2薄膜观察到光吸收边随Ge颗粒尺寸变小而蓝移的现象,这主要是由于Ge颗粒的量子限域效应所引起的.而对于非晶样品也出现了光吸收边蓝移和能隙展宽的现象,这可能是由于样品中的杂质或缺陷等受到限域作用的结果.
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