以熔盐法制备的K4Nb6O17片状粉体为前驱体,通过质子取代法制备了片状Nb2O5粉体,并且以其为模板结合模板晶粒生长(TGG)技术制备出较高织构度的X0.5Na0.5NbO3 (KNN)织构化无铅压电陶瓷,研究了不同工艺参数(模板含量、烧结温度和保温时间)对KNN织构化陶瓷的显微结构、介电性能以及压电性能的影响规律.研究结果表明:当模板含量、烧成温度和保温时间分别为10wt％,1120℃和5h时,可以获得织构度f为0.78的KNN织构化无铅压电陶瓷,并具有优异的压电和介电性能:平行于流延方向压电常数d33=141 pC/N,介电常数ε3T/ε0=503和平面机电耦合系数kp=39.7％;垂直于流延方向d33=112 pC/N,εT33/ε0=454和kp=37.5％.
参考文献
| [1] | 刘虎,李月明,沈宗洋,王竹梅,李润润.织构化K0.5Na0.5NbO3无铅压电陶瓷的性能研究[J].人工晶体学报,2011(02):445-449. |
| [2] | Evelyn Hollenstein;Matthew Davis;Dragan Damjanovic;Nava Setter .Piezoelectric properties of Li- and Ta-modified (K_(0.5)Na_(0.5))NbO_3 ceramics[J].Applied physics letters,2005(18):182905.1-182905.3. |
| [3] | Zhang SJ;Xia R;Shrout TR;Zang GZ;Wang JF .Piezoelectric properties in perovskite 0.948(K0.5Na0.5)NbO3-0.052LiSbO(3) lead-free ceramics[J].Journal of Applied Physics,2006(10):4108-1-4108-6-0. |
| [4] | Jing-Feng Li;Ke Wang;Bo-Ping Zhang .Ferroelectric and Piezoelectric Properties of Fine-Grained Na_(0.5)K_(0.5)NbO_3 Lead-Free Piezoelectric Ceramics Prepared by Spark Plasma Sintering[J].Journal of the American Ceramic Society,2006(2):706-709. |
| [5] | 沈宗洋,李敬锋.（Na,K）NDO_3基无铅压电陶瓷的研究进展[J].硅酸盐学报,2010(03):510-520. |
| [6] | Y. M. Kan;P. L. Wang;Y. B. Cheng;Y. X. Li;D. S. Yan .Preparation of Textured Bi_4Ti_3O_(12) Ceramics by Templated Grain Growth[J].Key engineering materials,2004(2):1317-1320. |
| [7] | 何杰,孙清池,刘培祥,李红元.烧结温度对PMSZT压电陶瓷性能的影响[J].稀有金属材料与工程,2008(z1):195-198. |
| [8] | 伍萌佳,杨群保,李永祥.织构化工艺在无铅压电陶瓷中的应用[J].无机材料学报,2007(06):1025-1031. |
| [9] | 刘培祥,孙清池,何杰,李红元.烧结温度对PMN-PNN-PZT四元系压电陶瓷微观结构和压电性能的影响[J].稀有金属材料与工程,2008(z1):371-373. |
| [10] | Yue-Ming Li;Zong-Yang Shen;Liang Jiang;Fen Wu;Zhu-Mei Wang;Yan Hong;Run-Hua Liao .Microstructure, phase transition and electrical properties of LiSbO_(3)-doped (K_(0.49)Na_(0.51))NbO_(3) lead-free piezoelectric ceramics[J].Journal of Materials Science. Materials in Electronics,2011(9):1409-1414. |
| [11] | Danya Lv;Ruzhong Zuo;Shi Su .Reactive templated grain growth and anisotropic electrical properties of (Na_(0.5)K_(0.5))NbO_(3) ceramics without sintering aids[J].Journal of Materials Science. Materials in Electronics,2012(7):1367-1372. |
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