由于金刚石与Si有较大的晶格失配度和表面能差,利用化学气相沉积(CVD)制备金刚石膜时,金刚石在镜面光滑的Si表面上成核率非常低.而负衬底偏压能够提高金刚石在镜面光滑的Si表面上的成核率,表明金刚石核与Si表面的结合力也得到增强.利用负偏压增强CVD系统制备金刚石膜时,气体辉光放电产生的离子对Si表面轰击,使得Si衬底表面产生了微缺陷(凹坑),增大了金刚石膜与Si衬底的结合面积.本工作主要从理论上研究离子轰击对金刚石膜与Si衬底结合力的影响.
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