介绍了一种用于高品质射频集成电感的厚膜多孔硅背向生长技术.ASITIC模拟证明厚膜多孔硅衬底能够显著提高射频集成电感的性能.采用背向生长技术成功地制备出了厚膜多孔硅包括穿透整个硅片的多孔硅,并证实了该技术作为后处理工艺应用于CMOS技术的可行性.ESEM对所制样品的表面和截面形貌进行了分析.通过多组实验,得出了多孔硅生长速度与腐蚀电流密度的准线性关系.
A backside growth technique of thick porous silicon layers for the on-chip RF integrated inductor is presented.ASITIC calculation confirms that the thick porous silicon substrate (through the wafer) is a better choice to achieve high quality factor RF integrated inductors. Fabrication and characterization of the through wafer PS layer with the backside growth technique were carried out, which proved the feasibility of post-processing procedure in CMOS technology. ESEM was used to observe the morphologies of the fabricated samples. The relationships of PS growth rate as a function of current density was concluded.
参考文献
[1] | Burghartz J.N.;Soyuer M. .Integrated RF and microwave components in BiCMOS technology[J].IEEE Transactions on Electron Devices,1996(9):1559-1570. |
[2] | Yue C.P.;Wong S.S. .On-chip spiral inductors with patterned ground shields for Si-basedRF ICs[J].IEEE Journal of Solid-State Circuits,1998(5):743-752. |
[3] | Lakdawala H.;Zhu X.;Luo H.;Santhanam S.;Carley L.R.;Fedder G.K. .Micromachined high-Q inductors in a 0.18-μm copper interconnectlow-k dielectric CMOS process[J].IEEE Journal of Solid-State Circuits,2002(3):394-403. |
[4] | Chen Kevin J et al.[J].IEEE Electron Device Letters,2004,25(06):363. |
[5] | Soyuer M.;Burghartz J.N. .Multilevel monolithic inductors in silicon technology[J].Electronics Letters,1995(5):359-360. |
[6] | Burghartz J N.[J].IEEE IEDM,1995:1015. |
[7] | Merrill R B.[J].IEEE IEDM,1995:983. |
[8] | Choong-Mo Nam;Young-Se Kwon .High-performance planar inductor on thick oxidized porous silicon (OPS) substrate[J].IEEE Microwave and Guided Wave Letters,1997(8):236-238. |
[9] | Han-Su Kim;Kyuchul Chong;Ya-Hong Xie .[J].Applied Physics Letters,2003,83(13):2710. |
[10] | Han-Su Kim;Dawei Zheng;A. J. Becker;Ya-Hong Xie .Spiral inductors on Si p/p{sub}+ substrates with resonant frequency of 20 GHz[J].IEEE Electron Device Letters,2001(6):275-277. |
[11] | Han-Su Kima;Ya-Hong Xie;Keith A Jenkins .[J].Journal of Applied Physics,2003,93(71):4226. |
[12] | Michel O. S. Dantas;Elisabete Galeazzo;Henrique E. M. Peres;Francisco Javier Ramirez-Fernandez .Silicon Micromechanical Structures Fabricated by Electrochemical Process[J].IEEE sensors journal,2003(6):722-727. |
[13] | Han-Su Kim;Eric C. Zouzounis;Ya-Hong Xie .Effective method for stress reduction in thick porous silicon films[J].Applied physics letters,2002(13):2287-2289. |
[14] | Halimaoui A.IEEE INSPEC[M].London:The Institution of Electrical Engineers,1997:12. |
[15] | Ali M .ASITIC[CP/OL].Niknejad in Berkeley University |
[16] | Bisi O;Stefano Ossicinib;Pavesi L .[J].Surface Science Reports,2000,38(01) |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%