采用溶胶-凝胶法制备了非晶铟镓锌氧化物(a-IGZO)薄膜,通过热重-差热示差技术分析了a-IGZO形成机理,并研究了热处理对a-IGZO薄膜的结构和光电性能影响.并用于薄膜晶体管(TFT)的有源层,制备的a-IGZO TFT,其具有明显的转移特性,其关态电流为10-11A,退火能够改善a-IGZO TFT器件性能,器件的开关比提高了两个数量级.
参考文献
| [1] | Dimitrakopoulos C D;Mascaro D J .Organic thin-film transistors:a review of recent advances[J].IBM Journal of Research and Development,2001,45:11. |
| [2] | Fortunato EMC;Barquinha PMC;Pimentel ACMBG;Goncalves AMF;Marques AJS;Martins RFP;Pereira LMN .Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature[J].Applied physics letters,2004(13):2541-2543. |
| [3] | Nomura K;Ohta H;Takagi A et al.Room-temperature fabrication of transparent flexible thin-film transistors amorphous oxide semiconductors[J].Nature,2004,432:488. |
| [4] | Hosono H .Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2006(9/20):851-858. |
| [5] | 张新安,张景文,张伟风,王东,毕臻,张杰,侯洵.以ZnO为沟道层的薄膜晶体管制备研究[J].功能材料,2008(07):1144-1146,1150. |
| [6] | Kamiya T;Nomura K;Hosono H .Present status of amprphous In-Ga-Zn-O thin-film transistors[J].Science and Technology of Advanced Materials,2010,11:044305. |
| [7] | Ong B S;Li C S;Li Y N et al.Solution-processed,highmobility ZnO thin-film transistors[J].Journal of the American Chemical Society,2007,129:2750. |
| [8] | D.-H. Lee;Y.-J. Chang;G. S. Herman;C.-H. Chang .A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors[J].Advanced Materials,2007(6):843-847. |
| [9] | Rha S H;Jung J;Jung Y S et al.Vertically integrated submicron amorphous-In2 Ga2 ZnO7 thin film transistor using a low temperature process[J].Applied Physics Letters,2012,100:203510. |
| [10] | Wu C Y;Cheng H C;Wang C L et al.Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient[J].Applied Physics Letters,2012,100:152108. |
| [11] | Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors[J].IEEE Transactions on Electron Devices,2010(5):1009. |
| [12] | Dongjo Kim;Chang Young Koo;Keunkyu Song;Youngmin Jeong;Jooho Moon .Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors[J].Applied physics letters,2009(10):103501-1-103501-3. |
| [13] | Kim K M;Kim C W;Heo J S et al.Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors[J].Applied Physics Letters,2011,99:242109. |
| [14] | Arun Suresh;Patrick Wellenius;Anuj Dhawan;John Muth .Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors[J].Applied physics letters,2007(12):123512.1-123512.3. |
| [15] | Gun Hee Kim;Hyun Soo Shin;Byung Du Ahn .Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor[J].Journal of the Electrochemical Society,2009(1):H7-H9. |
| [16] | Zhao YP.;Lu TM.;Palasantzas G.;De Hosson JTM.;Wang GC. .Surface-roughness effect on capacitance and leakage current of an insulating film[J].Physical Review.B.Condensed Matter,1999(12):9157-9164. |
| [17] | Y. Wang;S. W. Liu;X. W. Sun .Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors[J].Journal of Sol-Gel Science and Technology,2010(3):322-327. |
| [18] | Po-Tsun Liu;Yi-Teh Chou;Li-Feng Teng .Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors[J].Applied Physics Letters,2009(24):242101-1--242101-3-0. |
| [19] | R. Martins;P. Barquinha;A. Pimentel;L. Pereira;E. Fortunato .Transport in high mobility amorphous wide band gap indium zinc oxide films[J].Physica Status Solidi, A. Applied Research,2005(9):R95-R97. |
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