Hexagonal gallium nitride films were successfully fabricated through ammoniating Ga2O3 films deposited on silicon (111 ) substrates by electrophoresis. The structure, composition, and surface morphology of the formed films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM),and transmission electron microscopy (TEM). The measurement results reveal that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the silicon (111) substrates. Preliminary results suggest that varying the ammoniating temperature has obvious effect on the quality of the GaN films formed with this method.
参考文献
| [1] | Nakamura S .The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes[J].Science,1998,281:956. |
| [2] | Fasol G .Room-temperature blue gallium nitride laser diode[J].Science,1996,272:1751. |
| [3] | Someya T;Werner R;Forchel A;Catalano M.,Cingolani R., and Arakawa Y .Room temperature lasing at blue wavelengths in gallium nitride microcavities[J].Science,1999,285:1905. |
| [4] | Amano H;Tanaka T;Kunii Y;Kato K., Kim S.T.,and Akasaki I .Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure[J].Applied Physics Letters,1994,64:1377. |
| [5] | Nikishin S A;Faleev N N;Antipov V G;Francoeur S., Grave de Peralta L., Seryogin G.A., Temkin H,Prokofyeva T.I., Holtz M., and Chu S.N.G .High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia[J].Applied Physics Letters,1999,75:2073. |
| [6] | Jasinski J;Swider W;Liliental-Weber Z;Visconti P., Jones K.M., Reshchikov M.A., Yun F., Morkoc H., Park S.S., and Lee K.Y .Characterization of free-standing hydride vapor phase epitaxy GaN[J].Applied Physics Letters,2001,78:2297. |
| [7] | Nahlah Elkashef;R. S. Srinivasa;S. Major;S. C. Sabharwal;K. P. Muthe .Sputter deposition of gallium nitride films using a GaAs target[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(1/2):9-12. |
| [8] | Wang D.;Tamura M.;Ichikawa M.;Yoshida S.;Hiroyama Y. .Growth of high-quality cubic GaN on Si(001) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy[J].Journal of Crystal Growth,2000(1/4):44-50. |
| [9] | Ohtani A;Stevens K S;Beresford R .Microstructure and photoluminescence of GaN grown on Si (111) by plasma-assisted molecular beam epitaxy[J].Applied Physics Letters,1994,65:61. |
| [10] | Sanchez-Garcia MA.;Monroy E.;Sanchez FJ.;Calle F.;Munoz E. Beresford R.;Calleja E. .The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(111)[J].Journal of Crystal Growth,1998(1/2):23-30. |
| [11] | Boo JH.;Ho W.;Ustin SA. .Growth of hexagonal GaN thin films on Si(111) with cubic SiC buffer layers[J].Journal of Crystal Growth,1998(0):183-188. |
| [12] | Strittmatter A;Krost A;Turck V;StraBburg M ,Bimberg D , Blasing J , Hempel T , Christen J ,Neubauer B , Gerthsen D , Christmann T , and Meyer B K .LP-MOCVD growth of GaN on silison substrates-comparison between AlAs and ZnO nucleation layers[J].Materials Science and Engineering B,1999,59:29. |
| [13] | Kato S.;Taguchi T.;Yamada Y. .Structural properties and intense ultraviolet emission of polycrystalline GaN films on AlN ceramics grown by N plasma-excited CVD[J].Journal of Crystal Growth,1998(0):223-226. |
| [14] | Barfels T.;Jansons J.;Tale I.;Veispals A.;von Czarnowski A.;Wulff H.;Fitting HJ. .Structure and luminescence of GaN layers[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(1/4):191-195. |
| [15] | Li W;Ni W X .Residual strain in GaN epilayers grown on sapphire and 6H SiC substrates[J].Applied Physics Letters,1996,68:2705. |
| [16] | Kingsley C R;Whitaker T J;Wee A T S .Development of chemical beam epitaxy for the deposition of gallium nitride[J].Materials Science and Engineering B,1995,29:78. |
| [17] | Sasaki T;Matsuoka T .Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC[J].Journal of Applied Physics,1998,64:4531. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%