非极性GaN薄膜与器件的研究进展

硅酸盐通报 , 2014, 33(10): 2552-2571.

非极性GaN薄膜与器件的研究进展

孙孪鸿 ^1, , 徐家跃 ^2, , 邹军 ^3, , 王凤超 ^4,

1.上海应用技术学院,上海201418

2.上海应用技术学院,上海201418

3.上海应用技术学院,上海201418

4.上海应用技术学院,上海201418

关键词：非极性GaN , 蓝宝石 , 同质外延 , GaN基器件

Research Progress of Non-polar GaN Films and Devices

Keywords： non-polar GaN , sapphire , homo epitaxial , GaN based devices

在传统的衬底上生长出的GaN都是沿着极性轴c轴方向的,非极性GaN薄膜克服了极性薄膜中因为产生内建电场而带来的发光效率和结晶质量的问题.本文主要介绍了非极性GaN薄膜的结构特性、薄膜的制备方法、不同衬底上生长非极性GaN薄膜的研究进展及其器件应用.

参考文献

[1]	杨新波,徐军,李红军,毕群玉,程艳,苏良碧,周国清.非极性GaN用r面蓝宝石衬底[J].无机材料学报,2009(04):783-786.
[2]	陈金菊,王步冉,邓宏.LED用非极性GaN外延膜的制备技术进展[J].半导体光电,2011(04):449-454,516.
[3]	陆稳,雷天民.纤锌矿GaN光电性质的第一性原理研究[J].电子科技,2009(05):55-58.
[4]	杨利,魏芹芹,孙振翠,薛成山.氮化镓薄膜研究进展[J].山东师范大学学报(自然科学版),2003(04):27-30.
[5]	曹传宝,朱鹤孙.氮化镓薄膜及其研究进展[J].材料研究学报,2000(z1):1-7.
[6]	周健华,周圣明,邹军,黄涛华,徐军,谢自力,韩平,张荣.非极性GaN薄膜及其衬底材料[J].人工晶体学报,2006(04):765-771.
[7]	刘一兵,黄新民,刘安宁,肖宏志.基于GaN材料p型掺杂的研究进展[J].红外技术,2008(03):146-149.
[8]	王三胜,顾彪,徐茵,秦福文,窦宝锋,杨大智.GaN基材料生长及其在光电器件领域的应用[J].材料导报,2002(01):31-35.
[9]	Liu L.;Edgar JH. .Substrates for gallium nitride epitaxy [Review][J].Materials Science & Engineering, R. Reports: A Review Journal,2002(3):61-127.
[10]	Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy[J].Applied physics letters,2003(4):644-646.
[11]	Sun YJ.;Brandt O.;Jahn U.;Liu TY.;Trampert A.;Cronenberg S.;Dhar S. Ploog KH. .Impact of nucleation conditions on the structural and optical properties of M-plane GaN(1(1)over-bar-00) grown on gamma-LiAlO2[J].Journal of Applied Physics,2002(10):5714-5719.
[12]	Xu K.;Deng PZ.;Zhou YZ.;Zhou GQ.;Qiu RS.;Fang ZJ.;Xu J. .gamma-LiAlO2 single crystal: a novel substrate for GaN epitaxy[J].Journal of Crystal Growth,1998(1/2):127-132.
[13]	Chengxiang Liu;Zili Xie;Ping Han;Bin Liu;Liang Li;Jun Zou;Shengming Zhou;Li Hui Bai;Zhang Hai Chen;Rong Zhang;Youdou Zheng .Two-step growth of m-plane GaN epilayer on LiAlO_2 (100) by metal-organic chemical vapor deposition[J].Journal of Crystal Growth,2007(0):228-231.
[14]	C. Mauder;L. Rahimzadeh Khoshroo;H. Behmenburg;T.C. Wen;Y. Dikme;M.V. Rzheutskii;G.P. Yablonskii;J. Woitok;M.M.C. Chou;M. Heuken;H. Kalisch;R.H. Jansen .Growth And Investigation Of M-plane (in)gan Buffer Layers On Lialo_2 Substrates[J].Journal of Crystal Growth,2008(23):4976-4978.
[15]	石彪,刘学超,周仁伟,杨建华,郑燕青,施尔畏.碳化温度对异质外延3C-SiC薄膜结晶质量及表面形貌的影响[J].人工晶体学报,2013(05):856-859,868.
[16]	Fissel A. .Thermodynamic considerations of the epitaxial growth of SiC polytypes[J].Journal of Crystal Growth,2000(3/4):438-450.
[17]	Sun Q;Kwon SY;Ren ZY;Han J;Onuma T;Chichibu SF;Wang S .Microstructural evolution in m-plane GaN growth on m-plane SiC[J].Applied physics letters,2008(5):51112-1-51112-3-0.
[18]	Kobayashi A;Kawano S;Kawaguchi Y;Ohta J;Fujioka H .Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates[J].Applied physics letters,2007(4):41908-1-41908-3-0.
[19]	刘忠良,康朝阳,唐军,徐彭寿.4H-SiC衬底表面SiC薄膜的同质外延生长[J].人工晶体学报,2012(01):106-109,114.
[20]	李亮,李忠辉,罗伟科,董逊,彭大青,张东国.高质量GaN薄膜的MOCVD同质外延生长[J].人工晶体学报,2013(05):915-917.
[21]	Steven P. DenBaars;Daniel Feezell;Katheryn Kelchner .Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays[J].Acta materialia,2013(3):945-951.
[22]	文尚胜.高亮度GaN基蓝色LED的研究进展[J].量子电子学报,2003(01):10-17.

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非极性GaN薄膜与器件的研究进展

Research Progress of Non-polar GaN Films and Devices

参考文献