应用中频反应磁控溅射技术制备了Al2O3:CeCl3的非晶薄膜.Ce3+含量和薄膜的化学成分通过X射线散射能谱(EDS)测量.薄膜试样的晶体结构用x射线衍射分析.俄歇电子谱用于对薄膜材料的化学组分进行定性分析.薄膜的光致发光峰是在370 nm到405 nm范围内,它们来自于Ce3+离子的5d1激发态向基态4f1的两个劈裂能级的跃迁.发光强度强烈地依赖于薄膜中的掺杂浓度和沉积时的基片温度.薄膜发光来自于氯化铈分子中的发光中心,而不是其他的掺杂Ce3+离子.随铈含量增加,光致发光峰向低能方向移动,可能与薄膜中存在氯元素有关.
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