利用电子束蒸发技术在玻璃衬底上沉积了Ta掺杂ITO(ITO:Ta)薄膜,对比研究了在不同退火温度下ITO:Ta和ITO薄膜表面形貌、方阻、载流子浓度、霍尔迁移率和透光率的变化情况.结果表明,随着退火温度的上升,ITO:Ta薄膜的晶化程度不断提高,并获得较低的表面粗糙度.在合适的退火温度下,ITO:Ta薄膜的光电性能也有显著的改善.当在氮气氧气氛围下经过500℃退火时,ITO:Ta薄膜得到最佳的综合性能,表面均方根粗糙度为2.17 nm,方阻为10-20 Ω,在440 nm的透光率可达98.5%.
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