提出利用真空室残余的低浓度N原子制备超薄α-Ta(N)/TaN双层扩散阻挡层的方法,有效地避免了异质元素的引入和高N含量导致的高电阻率.用四点探针(FPP)、X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)进行薄膜电性能和微结构的表征,分析结果表明,利用低浓度氮化工艺,能调控超薄金属Ta膜的相结构,从而获得低阻α-Ta(N)/TaN双层Cu扩散阻挡层结构.高温退火的实验结果证明,此超薄结构具有高的热稳定性,失效温度达600℃.
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