使用CF4和CH4为源气体,利用射频等离子体增强化学气相沉积法,制备了a-C:F:H薄膜样品.采用拉曼光谱仪、傅里叶变换红外光谱仪、X射线光电子能谱仪(XPS)对薄膜的结构进行了测试和分析.研究发现:该膜呈空间网状结构,膜内碳与氟、氢的结合主要以sp3形式存在,而sp2形式的含量相对较少;在薄膜内主要含有C-Fx(x=1,2,3)、C-C、C-H2、C-H3等以及不饱和C=C化学键;同时,薄膜中C-C-F键的含量比C-C-F2键的含量要高.在不同功率下沉积的薄膜,其化学键结构明显不同.
参考文献
[1] | Endo K;Toru T .Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics[J].Applied Physics Letters,1996,68(20):2864-2866. |
[2] | Endo K;Toru T .Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics[J].Journal of Applied Physics,1995,78:1370-1372. |
[3] | Yokomichi H.;Amano T.;Masuda A.;Hayashi T. .Preparation of fluorinated amorphous carbon thin films[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,1998(Pt.A):641-644. |
[4] | Labelle C B;Karen K .Gleason pulsed plasma-enhanced chemical vapor deposition from CH2F2,C2 H2F4 and CHClF2[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1999,17(02):445-452. |
[5] | 刘雄飞,肖剑荣,简献忠,王金斌,高金定.a-C:F:H films prepared by PECVD[J].中国有色金属学会会刊(英文版),2004(03):426-429. |
[6] | Ma YJ.;Guo J.;Sathe C.;Agui A.;Nordgren J.;Yang HN. .Structural and electronic properties of low dielectric constant fluorinated amorphous carbon films[J].Applied physics letters,1998(25):3353-3355. |
[7] | Jung HS.;Park HH. .Structural and electrical properties of co-sputtered fluorinated amorphous carbon film[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):248-0. |
[8] | Yi J W;Lee Y H .Bakhtier Farouk Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition[J].Thin Solid Films,2003,423:97-102. |
[9] | L. Valentini;E. Braca;J.M. Kenny;G. Fedosenko;J. Enemann;L. Lozzi;S. Santucci .Analysis of the role of fluorine content on the thermal stability of a-C:H:F thin films[J].Diamond and Related Materials,2002(3-6):1100-1105. |
[10] | Agostino R D;Cramarossa F;Francassi F.Plasma Deposition,Treatment,and Etching of Polymers[M].New York:Academic Press,1990:144. |
[11] | Buuron A J M;Driessns R M A;Schram D C et al.Fast deposition of amorphous carbon films by an expanding cascaded arc plasma jet[J].Journal of Applied Physics,1995,78:528-533. |
[12] | 叶超,宁兆元,程珊华.电子回旋共振等离子体增强沉积氟化非晶碳薄膜的光学性种[J].物理学报,2001(10):2017-2022. |
[13] | NING Zhao-yuan;CHENG Shan-hua .Influence of thermal annealing on bonding structure and dielectric properties of fluorinated amorphous carbon film[J].Current Applied Physics,2002,2:439-443. |
[14] | Stohr J.NEXFAS Spectroscopy, Springer Series in Surface Sciences[M].New York:Springer,1992:109. |
[15] | N. Ariel;M. Eizenberg;Y. Wang;S. P. Murarka .Deposition temperature effect on thermal stability of fluorinated amorphous carbon films utilized as low-K dielectrics[J].Materials science in semiconductor processing,2001(4):383-391. |
[16] | Yi J W;Lee Y H;Farouk U B .Low dielectric fluorinated amorphous carbon thin films grown from C6 F6and Ar plasma[J].Thin Solid Films,2000,374:103-108. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%