研究和探讨了预处理和温度影响对碳纳米管定向生长机制的作用.利用等离子体增强化学气相沉积(PECVD)的方法,以金属Fe薄膜为催化剂,在单晶硅衬底上定向生长碳纳米管(CNT).通过给予不同的预处理时间和温度条件,在Fe/Si衬底上沉积出碳纳米管,通过扫描电子显微镜(SEM)进行表征,将不同的条件下生长的碳纳米管进行对比.结果表明,在适当的工艺条件下,可以生长出方向性好,纯度高的碳纳米管.
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