研究了平面磁控直流反应溅射法沉积氧化铝薄膜的过程。结果表明氧分压大小对反应溅射过程有决定性作用,当氧分压增大或减小过程中存在两个阈值。氧分压小于阈值为金属Al溅射区,大于阈值为氧化铝溅射区。在阈值附近总气压、溅射电压和沉积速率发生突变,溅射特性(V-J)曲线有不同规律。沉积的氧化铝膜为非晶态,高温下可晶化,本文还讨论了反应溅射的机理。
The deposition processes of stoichiometric alumina by means of planar magne-tron dc reactive sputtering have been invastigated. The results indicate that the oxygen patialpressure (OPP) could dramatically affect the chemical composition and crystal structure of thedeposited films and two threthold values of the OPP (threthold pressures) exist during sputter-ing. If the OPP is lower than the threthold pressures the sputtered films are mainly compo-sed of metallic aluminium with little alumina in it. When the OPP is higher than the threth-old pressures the films are only composed of the alumina. When the OPP varies near thethrethold pressures, the total gas pressure, the sputtering voltage and the depositing rate appearadrupt change, and the V-I characteristic curves display different laws. The deposited aluminawere amerphous and could crystallize at high temperature. The dc reactive sputtering mecha-nisms were discussed in this paper.
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