采用电子背散射衍射(EBSD)技术研究了黄铜H80经6%-50%冷轧变形后在633 K下进行长时间(24～72 h)退火后的晶界特征分布(GBCD).结果表明:小变形(6%～10%)冷轧后较比中等变形(25%～50%)冷轧后的H80样品在随后的退火中更容易诱发高比例的∑3、∑9和∑27等特殊晶界,其总值最高达76%;而且∑3n(n=1,2,3)特殊晶粒团的尺寸较大(100μm),一般大角晶界网络连通性的阻断效果明显优于后者.通过对特殊晶界的分布、形态和数量的对比分析,指出小变形低温退火可诱发某些晶界优先迁移,在迁移中生成非共格的∑3晶界并发生这些晶界的交互反应,这可能是黄铜H80实现GBCD优化的主要微观机制.
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