为考察具有Cu7In3相结构的Cu-In前驱膜对CuInS2薄膜微结构的影响,采用电沉积法制备了Cu-In薄膜,并对制备态Cu-In薄膜在380℃进行真空退火处理制备Cu7In3前驱膜.采用硫化法对制备态Cu-In薄膜和Cu7Ins薄膜进行硫化处理制备了CIS薄膜.结果表明,两种前驱膜经硫化处理均在表面生成CuxS偏析相,经KCN刻蚀处理发现以Cu7Ins为前驱膜制备的CuInS2薄膜高质量结晶,具有(112)择优取向,适合于制备CIS薄膜太阳能电池吸收层.
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