采用陶瓷先驱体转化法连接Cf/SiC复合材料.针对Cf/SiC复合材料的不同连接界面特性,采用不同的连接配方和工艺.结果表明:对于第一类以SiC相为主的连接界面,采用单一的聚硅氮烷即可实现Cf/SiC复合材料的连接,当连接温度为1 300 ℃,经两次浸渍/裂解增强处理的连接件接头抗剪强度达最大值29.6 MPa;连接层厚度为2～3 μm,其结构较为均匀致密,由无定型SiNC陶瓷组成;对于第二类以C纤维端面为主的连接界面,采用聚硅氮烷并加入活性填料纳米Al粉来实现其连接;当连接温度为1 150 ℃,经两次浸渍/裂解增强处理的连接件抗剪强度达最大值22.5 MPa;连接层厚度约为30 μm,连接层中含有SiC、Si3N4和AlN等相.
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