采用闭合场非平衡磁控溅射离子镀设备于单晶硅基体上制备了掺铬类石墨镀层,并利用X射线衍射仪(XRD)和透射电子显微镜(TEM)对真空退火处理前、后掺铬类石墨镀层的物相和微观组织结构演变规律进行了详细分析.研究结果表明:当真空退火温度达到500℃以上时,在掺铬类石墨镀层的C/Cr工作层中会相继出现Cr3C2、Cr23C6甚至微晶石墨等晶体；在掺铬类石墨镀层的真空退火过程中,Cr3C2碳化物相较Cr23C6碳化物相更容易于Cr原子弥散掺杂的非晶石墨层中析出,且Cr3C2碳化物相倾向于在C/Cr工作层中Cr原子浓度大的区域析出；Cr3C2和Cr23C6等碳化物相的析出对Cr原子浓度的依赖性逐渐减弱.
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