CMOS器件用金属栅材料的研究进展

金属功能材料, 2008, 15(3): 43-48.

CMOS器件用金属栅材料的研究进展

蔡苇 ^1, , 符春林 ^2, , 邓小玲 ^3, , 程文德 ^4,

1.重庆科技学院冶金与材料工程学院,重庆,401331;重庆大学材料科学与工程学院,重庆,400044

2.重庆科技学院冶金与材料工程学院,重庆,401331

3.重庆科技学院冶金与材料工程学院,重庆,401331

4.重庆科技学院冶金与材料工程学院,重庆,401331

基金项目: 重庆科技学院科技创新团队建设工程项目(CX06--9) 重庆市教委资助项目(KJ071401) 中国博士后科学基金(20070410774) 重庆市自然科学基金(CSTC,2007BB4212)

关键词：金属栅 , 综述 , 多晶硅 , 性能

Progress of Studies on Metal Gate Electrode in CMOS Device

传统多晶硅栅已不能适应CMOS器件尺寸进一步减小的要求,因此需要金属栅极材料来取代多晶硅.本文综述了多晶硅栅极存在的问题;金属栅极材料性能的要求;新型金属栅材料的研究进展及热点.最后提出了金属栅极材料研究中需要进一步解决的问题.

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材料期刊网

CMOS器件用金属栅材料的研究进展

Progress of Studies on Metal Gate Electrode in CMOS Device

参考文献