通过喷淋蚀刻实验研究了模具钢微细蚀刻加工时,工件掩膜间隙、蚀刻液喷淋压力和加工时间对蚀刻深度的影响.蚀刻深度随掩膜间隙的蚀刻尺寸、加工时间的增加而增大,随蚀刻液喷淋压力的增大呈先增大后减小趋势.这归因于掩膜间隙和蚀刻液喷淋压力的增大加快了蚀刻液的更新,使蚀刻反应充分并有利于反应杂质的排除.但是过大的喷淋压力减小了蚀刻液驻留时间,阻碍了蚀刻深度的增加.
参考文献
[1] | (C)ak1r O,Temel H,Kiyak M.Chemical etching of Cu-ETP copper[J].J.Mater.Proc.Technol.,2005,162:275 |
[2] | Mitchell P,Drozda T J,Wick C,et al.Tool & Manufacturing Engineers Handbook Vol.Ⅷ:Plastic Part Manufacturing[M].Dearborn:Society of Manufacturing Engineers,1996 |
[3] | Fadaei T A,Imanian E.A new etchant for the chemical machining of St304[J].J.Mater.Proc.Technol.,2004,149(1):404 |
[4] | Ueda R.Chemical machining by ferric chloride etchant[J].Corros.Eng.,1989,38(4):231 |
[5] | 熊惟皓.模具表面处理与表面加工[M].北京:化学工业出版社,2006 |
[6] | 傅玉婷,巴俊州,蒋亚雄等.喷淋蚀刻中不锈钢的侧蚀研究[J].舰船防化,2010,(4):15 |
[7] | Sun L J,Lian J S.Effects of the initial stencil width on stainless steel wet chemical etching:combined model and experimental investigations[J].J.Micromech.Microeng.,2009,19:1 |
[8] | McClean J L.Etchant with increased etch rate[P].U.S.Pat.,4462861,1984 |
[9] | Takechi K,Kanoh H,Otsuki S.Very high rate and uniform glass etching with HF/HCl spray for transferring thin-film transistor arrays to flexible substrates[J].Jpn.J.Appl.Phys.,2006,45:6008 |
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