Research on fabrication and properties of nanoporous GaN epilayers

稀有金属（英文版）, 2006, 25(z2): 5-10.

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1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate School of Chinese Academy of Sciences, Beijing 100039, China

2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

3.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate School of Chinese Academy of Sciences, Beijing 100039, China

4.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate School of Chinese Academy of Sciences, Beijing 100039, China

5.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate School of Chinese Academy of Sciences, Beijing 100039, China

6.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

7.Laboratoire Structures des Interfaces et Fonctionnalité des Couches Minces, UMR CNRS 6176, ENSICAEN,6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France

8.Laboratoire Structures des Interfaces et Fonctionnalité des Couches Minces, UMR CNRS 6176, ENSICAEN,6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France

9.Laboratoire Universitaire de Recherche d'Alencon, IUT d'Alencon, 61250 Damigny, France

基金项目: the CNRS/ASC(18152) 国家高技术研究发展计划(863计划)(2001AA311100;2002AA305304)

Research on fabrication and properties of nanoporous GaN epilayers

Keywords： nanoporous

Gallium nitride (GaN) epilayers with nanopore arrays were fabricated by inductive coupled plasma (ICP) etching using anodic aluminum oxide (AAO) as mask.Nanoporous AAO templates were formed by anodizing the Al films deposited on GaN epilayers.The diameter of the perforations in the AAO masks could be easily controlled by tuning the technique parameters of AAO fabrication process.Cl2/Ar and Cl2/He were employed as etching gas.Scanning electron microscopy (SEM) analysis shows that vertical nanoporous arrays with uniform distribution can directly be transferred from AAO masks to GaN films in some proper conditions.Photoluminescence (PL) spectra, X-ray diffraction (XRD) and Raman spectroscopy were applied to assess properties of the nanoporous GaN films with different average pore diameters and interpore distances.

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Research on fabrication and properties of nanoporous GaN epilayers

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