ZnO基注入式发光二极管和激光器件的研究目前仍处于初级阶段,即p型ZnO和ZnOp-n结的制备与特性研究.由于ZnOO薄膜中存在较强的自补偿机制,使得很难有效地施行p型元素的掺杂.本文介绍了目前国际上通用的掺杂方法,对不同方法制备的p型ZnO和ZnOp-n结的特点进行了比较分析,并讨论了目前生长高质量的突变型ZnOp-n结所面临的问题.
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