采用RF磁控溅射法在玻璃衬底和PET衬底上沉积了Al掺杂的ZnO(AZO)薄膜,衬底的直流偏压为0～50V.主要研究了薄膜的结构、光学和电学特性.在玻璃衬底上制备AZO薄膜的沉积速率随偏压的升高而增大,然而再增加偏压时反而下降.当偏压为30V时,在玻璃衬底上制备的薄膜的最低电阻率为6.5×10-4Ω·cm,在波长450～800nm内的平均透射率大于80%;在PET衬底上制备的薄膜也有相似的特性,但没有在玻璃衬底上制备的好.
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