采用微波等离子化学气相沉积(MW-PCVD)制备金刚石/碳化硅复合梯度膜.工作气体为H2,CH4和Si[CH3]4(四甲基硅烷,TMS),其中H2∶CH4=100∶0.6,Si[CH3]4为0％-O.05％,沉积压力为3300Pa,基体温度为700℃,微波功率为700W.基体为单晶硅,在沉积前用纳米金刚石颗粒处理.沉积后的样品经扫描电子显微镜(SEM),电子探针显微分析(EPMA),X射线能量损失分析(EDX)表明:沉积膜中的碳化硅含量是随Si[CH3]4流量的变化而改变.通过改变Si[CH3]4的流量可以制备金刚石/碳化硅复合梯度膜,且梯度膜中金刚石与复合膜过渡自然平滑.
iamond/SiC compositional gradient films were deposited by the microwave plasma CVD, using a gas mixture of hydrogen, methane and tetramethylsilane (TMS). Single crystalline silicon wafers, pretreated with nano-diamond particles
before deposition, were used as substrates. The films were characterized by scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and energy-dispersive X-ray analysis (EDX). The results show that the content of diamond
and silicon carbide in the films changes with TMS flow rates, and diamond/silicon carbide films with gradient composition and smooth transition can be obtained by adjusting the TMS flow rate during deposition process.
参考文献
| [1] | |
| [2] | Nesladek M, Asinari C, Spinnewyn J. Diamond and Related Materials, 1993, 3: 98--104. [2] Yang P C, Zhu W, Glass J T. J. Materials Research, 1993, 8 (8): 1773--1776. [3] Lorenz H P. Diamond and Related Materials, 1995, 4: 1088--1092. [4] Fan Q H, Fernandes A, Pereira E, et al. Diamond and Related Materials, 1999, 8: 1549--1554. [5] Schaefer L, Fryda M, Stolley T, et al. Surface and Coatings Technology, 1999, 116-119: 447--451. [6] Nono M C A, Corat E J, Ueda M, et al. Surface and Coatings Technology, 1999, 112: 295--298. [7] Klage C-P, Fryda M, Matthee T, et al. Refractory Metals & |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%