用射频磁控溅射法制备了SiC薄膜,并对其进行了退火处理.用AFM观察了薄膜的表面形貌,测量了薄膜的厚度与透射光谱.用J.C.Manifacier提出并由R.Swanepoel加以修正和完善的包络线法对薄膜透射光谱进行了分析计算,并结合Tuac公式确定了薄膜的光学带隙.结果表明:在不同射频功率下制备的薄膜均有较强的蓝紫光吸收特性,在低功率下可制备出表面平整,吸收系数小,光学带隙大的薄膜;退火处理后薄膜的吸收系数减小,光学带隙增大,晶粒向圆形转化且尺寸变大.
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