室温下,用94 MeV的Xe离子辐照纳米晶和非晶硅薄膜以及单晶硅样品,辐照量分别为1.0×10~(11),1.0×10~(12)和1.0×10~(13) ions/cm~2.所有样品均在室温下用UV/VIS/NIR光谱仪进行检测分析.通过对比研究了纳米晶、非晶、单晶硅样品的光学带隙随Xe离子辐照量的变化.结果表明,不同结构的硅材料中Xe离子辐照引起的光学带隙变化规律差异显著:随着Xe离子辐照量的增加,单晶硅的光学带隙基本不变,非晶硅薄膜的光学带隙由初始的约1.78 eV逐渐减小到约1.54eV,而纳米晶硅薄膜的光学带隙则由初始的约1.50 eV快速增大至约1.81 eV,然后再减小至约1.67 eV.对硅材料结构影响辐照效应的机理进行了初步探讨.
Mono-crystalline silicon(c-Si),thin films of amorphous silicon(a-Si)and nano-crystalline silicon(nc-Si)were irradiated at room temperature(RT)by using 94 MeV Xe-ions at 1.0×10~(11),1.0×10~(12) or 1.0×10~(13) Xe-ions/cm~2,respectively.All samples were analyzed at RT by an UV/VIS/NIR spectrometer(Lambda 900,PE,Germany),and then the uariation of the optical bandgap with the irradiation fluence was investigated systematically.The results show that the optical bandgap of the silicon samples irradiates by Xe-ion changed dramatically with different crystalline structures.For the a-Si thin films,the optical bandgap values decreased gradually from～1.78 to～1.54 eV with increasing Xe-ion irradiation fluence.For the nc-Si thin films,the optical bandgap values increased sharply from～1.50(origin)to～1.81 eV(Φ=1.0×10~(12)ions/cm~2),and then decreased to～1.67 eV(Φ=1.0×10~(13) ions/cm~2).However,there is no observable change of the optical bandgap of the c-Si after Xe-ion irradiations.Possible mechanism on the modification of the silicon thin films was briefly discussed.
参考文献
| [1] | Liu Changlong,Zhu Zhiyong,Hou Ming-dong,et al.Nuclear Physics Review,2000,17(3):140(in Chinese).(刘昌龙,朱志勇,侯明东等.原子核物理评论,2000,17(3):141.) |
| [2] | Toulemonde M,Fuchs G,Nguyen N,et al.Phys Rev,1987,B35:6560. |
| [3] | Thibaudau F,Cousty J,Balanzat E.Phys Rev Lett,1991,67:1582. |
| [4] | Hou M D,Kla(u)münzer S,Schumarcher G.Phys Rev,1990,B41:1144. |
| [5] | Barbu A,Dunlop A,Duparc A H,et al.Nucl Instr and Meth,1998,B145,354. |
| [6] | Toulemonde M,Dural J,Nouet G,et al.Phys Status Solidi,1989,A114(2):467. |
| [7] | Levallois M,Bogdanski P,Toulemonde M,et al.Nucl Instr and Meth,1992,B63:14. |
| [8] | Mangiagalli P,Levalois M,Marie P,et al.Eur Phys J:Appl Phys,1999,6:121. |
| [9] | Diao X G,Yoshida Y,Hayakawa K,et al.J Phys:Condens Matter,2002,14(3):L57. |
| [10] | D(o)beli M,Ames F,Ender R M,et al.Nucl Instr and Meth,1996,B106:43. |
| [11] | Canut B,Bonarda N,Ramos S M M,et al.Nucl Instr and Meth,1998,B146:296. |
| [12] | Dunlop A,Jaskierowicz G,Della-Negra S.Nucl Instr and Meth,1998,B146:302. |
| [13] | Furuno S,Ostu H,Hojou K,et al Nucl Instr and Meth,1996,B107:223. |
| [14] | Ziegler J F.SRIM2006.Available from:http://www.srim.org/. |
| [15] | Jin Yunfan,Wang Zhiguang.Nuclear Physics Review,1998,15(2):88(in Chinese).(金运范,王志光.原子核物理评论,1998,15(2):88.) |
| [16] | van Buuren T,Dinh L N,Chase L L,et al.Phys Rev Lett,1998,80(17):3803. |
| [17] | Schuppler S,Friedman S L,Marcus M A,et al.Phys Rev,1995,B52:4910. |
| [18] | Wang Z G,Dufour C,Euphrasie S,et al.Nucl Instr and Meth,2003,B209:194. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%