3C-SiC薄膜的外延生长一直是SiC材料制备领域的一个热点,单晶Si衬底异质外延3C-SiC是实现大尺寸、低成本薄膜的有效方法,备受人们关注.单晶Si与3C-SiC之间存在较大的晶格失配(20%)和热膨胀系数差异(8%),严重制约着高质量单晶薄膜的制备.本文对单晶Si衬底异质外延3C-SiC薄膜的基本原理和工艺过程进行了总结,着重介绍了薄膜生长中的缺陷和可控掺杂方面的研究进展以及面临的挑战,并对今后的研究热点做了归纳展望.
参考文献
[1] | Gupta A;Sengupta J;Jacob C .An atomic force microscopy and optical microscopy study of various shaped void formation and reduction in 3C-SiC films grown on Si using chemical vapor deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(8):1669-1676. |
[2] | Nishino S;Suhara H;Ono H et al.Epitaxial-growth and electric characteristics of cubic SiC on silicon[J].Journal of Applied Physics,1987,61(10):4889-4893. |
[3] | Tan S H;Beetz C P;Carulli J M et al.Space-charge-limited-current conduction in heteroepitaxial 3 C-SiC(111)on TiC(111)[J].Journal of Materials Research,1992,7(07):1816-1821. |
[4] | M.C. Luo;J.M. Li;Q.M. Wang;G.Sh. Sun;L. Wang;G.R. Li;Y.P. Zeng;L.Y. Lin .Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation[J].Journal of Crystal Growth,2003(1/2):1-8. |
[5] | Soueidan M;Ferro G;Nsouli B;Cauwet F;Dazord J;Younes G;Monteil Y .Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2006(1/3):66-72. |
[6] | Nishino S;Powell J A;Will H A .Production of large-area single-crystal wafers of cubic SiC for semiconductor-devices[J].Applied Physics Letters,1983,42(05):460-462. |
[7] | Zorman CA.;Dewa AS.;Mehregany M.;Jacob C.;Nishino S. Pirouz P.;Fleischman AJ. .EPITAXIAL GROWTH OF 3C-SIC FILMS ON 4 IN DIAM (100) SILICON WAFERS BY ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION[J].Journal of Applied Physics,1995(8):5136-5138. |
[8] | Nagasawa H.;Yagi K. .3C-SIC SINGLE-CRYSTAL FILMS GROWN ON 6-INCH SI SUBSTRATES[J].Physica status solidi, B. Basic research,1997(1):335-358. |
[9] | Severino A;Bongiorno C;Piluso N et al.High-quality 6 inch(111)3 C-SiC films grown on off-axis(111)Si substrates[J].THIN SOLID FILMS,2010,518:S165-S169. |
[10] | Nagasawa H.;Yagi K.;Kawahara T. .3C-SiC hetero-epitaxial growth on undulant Si(001) substrate[J].Journal of Crystal Growth,2002(Pt.2):1244-1249. |
[11] | Yagi K;Kawahara T;David J et al.Switch-back ep:taxy'as a novel technique for reducing stacking faults in 3C-SiC[J].Materials Science Forum,2006,527-529:291-294. |
[12] | Severino A;D'Arrigo G;Bongiorno C;Scalese S;La Via F;Foti G .Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates[J].Journal of Applied Physics,2007(2):23518-1-23518-10-0. |
[13] | Bjorketun LO.;Ivanov IP.;Wahab Q.;Sundgren JE.;Hultman L. .INTERFACIAL VOID FORMATION DURING VAPOR PHASE GROWTH OF 3C-SIC ON SI(001) AND SI(111) SUBSTRATES - CHARACTERIZATION BY TRANSMISSION ELECTRON MICROSCOPY[J].Journal of Crystal Growth,1997(3/4):379-388. |
[14] | A. Gupta;C. Jacob .Unusual defects in silicon carbide thin films grown by multiple or interrupted growth technique[J].Microelectronic engineering,2006(1):5-8. |
[15] | Li J p;Steckl A J .AFM study of nucleation and void formation in SiC carbonization of Si[J].Materials Research Society Symposium Proceedings,1993,280:739-744. |
[16] | Steckl A J;Li J P .Rapid thermal chemical vapor-deposition growth of mamometer-thin SiC on silicon[J].THIN SOLID FILMS,1992,216(01):149-154. |
[17] | Chen W Y;Chen C C .Growth of 3C-SiC on Si(100)by low pressure chemical vapor deposition using a modifled four-step process[J].Crypt Grouth Des,2009,9(06):2616-2619. |
[18] | Ferro G.;Vincent H.;Thevenot V.;Tran MD.;Cauwet F.;Bouix J.;Monteil Y. .ATOMIC FORCE MICROSCOPY GROWTH MODELING OF SIC BUFFER LAYERS ON SI(100) AND QUALITY OPTIMIZATION[J].Journal of Applied Physics,1996(8):4691-4702. |
[19] | B. Burkland;Z. Y. Xie;J. H. Edgar .Effects of the Addition of Silane during Carbonization on the Epitaxy of 3C-SiC on Si[J].Journal of the Electrochemical Society,2002(9):G550-G554. |
[20] | Investigation of antiphase domain annihilation mechanism in 3C-SiC on Si substrates[J].Journal of Applied Physics,2003(7):4676-4689. |
[21] | Shibahara K;Nishino S;Matsunami H et al.Surface-morphology of cubic SiC(100)grown on Si(100)by chemical vapor-deposition[J].Journal of Crystal Growth,1986,78(03):538-544. |
[22] | Shibahara K;Nishino S;Matsunami H et al.Antiphase-domain-free growth of cubic SiC on Si(100)[J].Applied Physics Letters,1987,50(26):1888-1890. |
[23] | Nagasawa H;Yagi K;Kawahara T;Hatta N .Reducing planar defects in 3C-SiC[J].Chemical vapor deposition: CVD,2006(8/9):502-508. |
[24] | Nagasawa H;Abe M;Yagi K;Kawahara T;Hatta N .Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects[J].Physica status solidi, B. Basic research,2008(7):1272-1280. |
[25] | Kunstmann T;Veprek S .Heteroepitaxy of beta-SiC from methyltrichlorosilane and methyltribromosilane on Si(100)without a carbon buffer layer[J].Applied Physics Letters,1995,67(21):3126-3128. |
[26] | Growth of 3C-SiC on Si(111) using the four-step non-cooling process[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2010(20):P.5700. |
[27] | Wei-Cheng Lien;Nicola Ferralis;Carlo Carraro;Roya Maboudian .Growth of Epitaxial 3C-SiC Films on Si(100) via Low Temperature SiC Buffer Layer[J].Crystal growth & design,2010(1):36-39. |
[28] | Yuan C;Steckl A J;LobodaM J et al.Effect of carbonization on the growth of 3C-SiC on Si(111)by silacyclobutane[J].Applied Physics Letters,1994,64(22):3000-3002. |
[29] | R. Anzalone;C. Locke;J. Carballo;N. Piluso;A. Severino;G. D'Arrigo;A. A. Volinsky;F. La Via;S.E. Saddow .Growth rate effect on 3C-SiC film residual stress on (100) Si substrates[J].Materials Science Forum,2010(Pt.1):143-146. |
[30] | Fang Liu;Carlo Carraro;Jiaru Chu;Roya Maboudian .Residual stress characterization of polycrystalline 3C-SiC films on Si(100) deposited from methylsilane[J].Journal of Applied Physics,2009(1):013505-1-013505-6. |
[31] | Kim H J;Davis R F .Theoretical and empirical-studies of impurity incorporation into beta-SiC thin-films during epitaxial-growth[J].Journal of the Electrochemical Society,1986,133(11):2350-2357. |
[32] | M. Zielinski;M. Portail;T. Chassagne;S. Juillaguet;H. Peyre .Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor[J].Journal of Crystal Growth,2008(13):3174-3182. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%