研制了两种非晶态物质Ｃｕ_（５０）Ｔｉ_（５０），Ｃｕ_（５０）Ｔｉ_（５０）Ｂ作为对Ｓｉ_３Ｎ_４扩散焊连接的中间层材料．研究结果表明：用非晶态作为中间层可改善工艺条件，降低扩散焊温度；非晶态中间层接头比其相应晶态中间层接头的剪切强度有明显提高．其中硼对提高接头剪切强度贡献很大．用非晶态Ｃｕ_（５０）Ｔｉ_（５０）Ｂ作中间层时，接头强度最高可达３４０ＭＰａ用晶态和非晶态Ｃｕ_（５０）Ｔｉ_（５０），Ｃｕ_（５０）Ｔｉ_（５０）Ｂ作中间层对Ｓｉ_３Ｎ_４进行扩散焊连接的机制是：活性元素Ｔｉ向陶瓷界面扩散和富集并与Ｓｉ_３Ｎ_４发生反应生成界面相ＴｉＮ，ＴｉＳｉ_２等．从而实现连接．
An attempt was made to prepare the Cu_(50)Ti_(50) and Cu_(50)Ti_(50)B amorphous alloy interlayers in diffusion bonding of Si_3N_4 ceramic substrates. The amorphous Cu_(50)Ti_(50) interlayer, in comparison with the crystalline one, may improve the technological operation,reduce the diffusion bonding temperature and obviously increase the shearing strength,particularly up to 340 MPa with some B addition. It seems that the mechanism of the diffusion bonding of Si_3N_4 with Cu_(50)Ti_(50) and Cu_(50)Ti_(50)B interlayers is due to an activeelement Ti, which diffuses toward the interface of joint and reacts with Si_3N_4 to form the interface phase, such as TiN, TiSi_2, etc.
参考文献
| [1] | |
| [2] | NakaM,TanakaT,OkamotoⅠ．TransactionofJWEL,1985 |
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