提出了一种多喷淋头式MOCVD反应器.针对新型反应器,对GaN生长的MOCVD过程进行了数值模拟,模拟考虑了热辐射和化学反应,计算了反应器内流场、温场和浓度场,导流(筒)壁面的寄生沉积以及GaN生长速率,并分析了反应室几何因素对生长均匀性的影响.模拟结果显示,衬底表面大部分区域具有均匀的温场和良好的滞止流.通过对浓度场和GaN生长速率的分析,得出MMGa是薄膜生长的主要反应前体.通过对反应器高度H、导流筒与托盘间距h、导流筒半径R等参数的优化,给出了提高薄膜生长速率和均匀性的条件.
参考文献
| [1] | 左然,李晖.MOCVD反应器的最佳输运过程及其优化设计[J].半导体学报,2008(06):1164-1171. |
| [2] | Hitchman M L;Jensen K F.Chemical Vapor Deposition[M].Academic Press,Inc,1993 |
| [3] | Fotiadis D I;Kieda S;Jensen K F .Transport Phenomena in Vertical Reactors for Metalorganic Vapor Phase Epitaxy:Effects of Heat Transfer Characteristics,Reactor Geometry and Operating Conditions[J].Journal of Crystal Growth,1990,102(03):441-470. |
| [4] | Weyburne D W;Ahern B S .Design and Operating Considerations for A Water-cooled Close-spaced Reactant Injector in A Production Scale MOCVD Reactor[J].Journal of Crystal Growth,1997,170(1-4):77-82. |
| [5] | Guo Y;Pitts OJ;Jiang WY;Watkins SP .Numerical optimization of an optical showerhead reactor design for organometallic vapor phase epitaxy[J].Journal of Crystal Growth,2006(2):345-351. |
| [6] | Theodoropoulos C.;Moffat HK.;Han J.;Mountziaris TJ. .Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy[J].Journal of Crystal Growth,2000(1/2):65-81. |
| [7] | W. K. Cho;D. H. Choi .Optimization of a horizontal MOCVD reactor for uniform epitaxial layer growth[J].International Journal of Heat and Mass Transfer,2000(10):1851-1858. |
| [8] | Pawlowski RP.;Salinger AG.;Mountziaris TJ.;Moffat HK.;Shadid JN.;Thrush EJ.;Theodoropoulos C. .Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design[J].Journal of Crystal Growth,2000(0):622-628. |
| [9] | Gadgil P N .Single Wafer Processing in Stagnation Point Flow CVD Reactor:ProsPects,Constraints and Reactor Design[J].Journal of Electronic Materials,1993,22(02):171-177. |
| [10] | 徐谦,左然.反向流动垂直喷淋式MOCVD反应器生长GaN的化学反应数值模拟[J].人工晶体学报,2007(02):338-343. |
| [11] | Bergunde T.;Kadinski L.;Makarov YN.;Yuferev VS.;Schmitz D.;Strauch G.;Jurgensen H.;Dauelsberg M. .PROCESS OPTIMISATION OF MOVPE GROWTH BY NUMERICAL MODELLING OF TRANSPORT PHENOMENA INCLUDING THERMAL RADIATION[J].Journal of Crystal Growth,1997(3/4):660-669. |
| [12] | Kadinski L.;Schafer M.;Vasilev MG.;Yuferev VS.;Makarov YN. .DEVELOPMENT OF ADVANCED MATHEMATICAL MODELS FOR NUMERICAL CALCULATIONS OF RADIATIVE HEAT TRANSFER IN METALORGANIC CHEMICAL VAPOUR DEPOSITION REACTORS[J].Journal of Crystal Growth,1995(1/4):209-213. |
| [13] | Nitride CVD module;STR GmbH .PO Box 1207,91002 Erlangen,Germany[OL].http://www.semitech.us |
| [14] | Masi M;Simka H;Jensen K F et al.Simulation of Carbon Doping of GaAs During MOVPE[J].Journal of Crystal Growth,1992,124:483-492. |
| [15] | Sengupta D;Mazumder S;Kuykendall W;Lowry SA .Combined ab initio quantum chemistry and computational fluid dynamics calculations for prediction of gallium nitride growth[J].Journal of Crystal Growth,2005(3/4):369-382. |
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