目前蓝宝石衬底氮化镓基发光二极管取得了显著发展,但在通用照明领域中,GaN基LED仍然需要更高的发光效率和光输出功率.提高发光亮度和抑制大电流注入发光效率衰减是当前GaN基LED领域的研究重点.从GaN基LED外延层内部结构即电子发射层、发光复合区量子阱、电子阻挡层方面介绍了近年来提高LED发光亮度和抑制发光效率衰减的最新进展,分析了电子发射层、发光复合区结构、电子阻挡层对LED性能的影响,并展望了其未来的发展趋势.
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