利用分子束外延(MBE)技术在GaAs(001)衬底上生长了GaN0.01As0.99薄膜,然后使用光调制反射(PR)光谱研究了薄膜的光学性质和能带结构.PR光谱实验表明GaN0.01As0.99/GaAs薄膜价带在Γ点发生轻、重空穴分裂,且分裂的轻、重空穴带到导带边的2个跃迁峰随着温度的升高均发生红移.采用Varshni法则、Bose-Einstein关系和BAC模型分别对轻、重空穴的能隙分裂和红移特征进行了拟合.分析结果表明,随着温度的升高,GaNAs外延层与GaAs衬底间晶格失配的减少可能是导致应变能和价带分裂能量减少的主要因素.
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