对电子芯片在FC-72工质中浸没喷射沸腾换热进行了实验研究.通过干腐蚀技术在硅片表面加工出50 μm×60μm,50 μm×120μm(宽×高)的柱状微结构,硅片尺寸为10 mm× 10 mm×0.5 mm,过冷度分别为25、35 K,喷射速度Vj分别为0.5、1.0、1.5 m/s.实验表明,临界热流密度随着喷射速度和过冷度的增加而增加,增加过冷度和喷射速度可减小气泡脱离时的尺寸,增加气泡脱离频率,因此提高了临界热流密度并且降低了壁面温度.此外,在单相对流换热区对流换热占据主导地位,热流密度随着壁面过热度线性增加;在核态沸腾换热区,对流换热与核态沸腾换热同时影响着换热过程.当喷射速度较小时,核态沸腾区曲线的斜率比单相对流区曲线的斜率大得多,显示出浸没喷射沸腾的优良换热性能.
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