纳米硅薄膜具有卓越的光学和电学特性,其在光电器件方面潜在的应用越来越引起人们的兴趣.讨论了用磁控溅射法制备纳米硅薄膜的微观机理及沉积参数对薄膜结构和性能的影响.其中,氢气分压、基片温度、溅射功率是磁控溅射法沉积纳米硅的关键参数,适当的温度、较高的氢气分压和较低的溅射功率有利于纳米硅的生成.
Nanocrystalline silicon thin films become a hot subject for the excellent optical,electronic characteris-tics and potential application in photoelectric devices. The mechanism of the growth of nanocrystalline silicon thin films prepared by magnetron sputtering are discussed and the structure and characteristic of the films influenced by dif-ferent deposition parameters are analyzed respectively. On the basis of the discussion, it can be concluded that hydro-gen pressure, substrate temperature and sputtering power are the key parameters. The nanocrystalline phase will be propitious to appear at proper suhstrate temperature, high hydrogen pressure and comparatively low sputtering power.
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