利用不同的电极材料和制备方法制备了3种M/HgI2.采用热电子发射模型计算了相应的接触势垒.采用比接触电阻法、电极系数法和欧姆系数法对比了M/HgI2的欧姆接触特性.结果表明,C/HgI2、AuCl3/HgI2和Au/HgI2的接触势垒均约为0.9eV;C/HgI2和AuCl3/HgI2具有良好的欧姆特性,Au/HgI2的欧姆特性相对较差.分析认为,HgI2晶体表面费米能级的钉扎导致了相近的接触势垒.但由于电极制备工艺没有显著影响AuCl3/HgI2和C/HgI2晶体表面质量,因而具有良好的欧姆接触特性.由于溅射Au电极在制备工艺中的温度升高和真空度造成Au/HgI2晶体表面质量下降,因此其欧姆接触特性较差.
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