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综述了近年来SiC一维、准一维纳米材料制备工艺的最新研究进展,重点介绍了模板生长法、化学气相沉积法、熔体生长法、碳热还原法和溶胶-凝胶法的工艺特点,并对不同工艺方法制备的SiC一维、准一维纳米材料的微观形貌、优异性能进行了简要概述,总结了现阶段SiC一维、准一维纳米材料制备工艺研究所面临的问题及发展前景.

参考文献

[1] Bechelany, M;Brioude, A;Cornu, D;Ferro, G;Miele, P .A Raman spectroscopy study of individual SiC nanowires[J].Advanced Functional Materials,2007(6):939-943.
[2] Nakamura, D;Gunjishima, I;Yamaguchi, S;Ito, T;Okamoto, A;Kondo, H;Onda, S;Takatori, K .Ultrahigh-quality silicon carbide single crystals[J].Nature,2004(7003):1009-1012.
[3] Li Z J;Gao W D;Meng A L et al.[J].Journal of Physical Chemistry C,2009,113(01):91-96.
[4] Yang Y J;Meng G W;Liu X Y et al.[J].Journal of Physical Chemistry C,2008,112(51):20126-20130.
[5] Ryu Y;Tak Y;Yong K et al.[J].Nanotechnology,2005,16:5370-5374.
[6] Han XD;Zhang YF;Zheng K;Zhang XN;Zhang Z;Hao YJ;Guo XY;Yuan J;Wang ZL .Low-temperature in situ large strain plasticity of ceramic SiC nanowires and its atomic-scale mechanism[J].Nano letters,2007(2):452-457.
[7] Yang W;Araki H;Thaveethavorn S et al.[J].Advanced Materials,2005,17:1519-1523.
[8] Zhang Y F;Han X D;Wang Z L et al.[J].Advanced Materials,2007,17:3435-3440.
[9] Mpourmpakis;Froudakis G et al.[J].Nano Letters,2006,6:1581.
[10] Zhou W M;Yan L;Wang Y et al.[J].Applied Physics Letters,2006,89:013105-013107.
[11] Zhao J X;Ding Y H et al.[J].JOURNAL OF CHEMICAL THEORY AND COMPUTATION,2009,5:1099-1105.
[12] Niu J J;Wang J N et al.[J].Journal of Physical Chemistry B,2009,113(09):2909-2912.
[13] Pan ZW.;Au FCK.;Duan XF.;Zhou WY.;Shi WS.;Wang N.;Lee CS. Wong NB.;Lee ST.;Xie SS.;Lai HL. .Oriented silicon carbide nanowires: Synthesis and field emission properties[J].Advanced Materials,2000(16):1186-1190.
[14] Borowiak E;Ruemmeli M H et al.[J].Applied Physics Letters,2004,85(14):2932-2934.
[15] Pham-Huu C;Keller N;Ehret G et al.[J].Journal of Catalysis,2001,200:100-410.
[16] Keller N;Pham-Huu C;Ehret C et al.[J].CARBO,2003,41:2131-2139.
[17] Li Z J;Zhang J L;Meng A L et al.[J].Journal of Physical Chemistry B,2006,110:22382-22386.
[18] Seong HK;Choi HJ;Lee SK;Lee JI;Choi DJ .Optical and electrical transport properties in silicon carbide nanowires[J].Applied physics letters,2004(7):1256-1258.
[19] Wang CS;Zhang JL;Meng AL;Zhang M;Li ZJ .Large-scale synthesis of P-SiC/SiOx coaxial nanocables by chemical vapor reaction approach[J].Physica, E. Low-dimensional systems & nanostructures,2007(1):128-132.
[20] López-Camaacho E;Fernández M et al.[J].Nanotechnolog y,2008,19(30):1-5.
[21] Meng A L;Li Z J;Zhang J.L et al.[J].Journal of Crystal Growth,2008,308:263-268.
[22] Zhang D;Jasinki J;Dunlap M et al.[J].Applied Physics Letters,2008,8(92):595-599.
[23] Guo JZ;Zuo Y;Li ZJ;Gao WD;Zhang JL .Preparation of SiC nanowires with fins by chemical vapor deposition[J].Physica, E. Low-dimensional systems & nanostructures,2007(2):262-266.
[24] Zhang Y F;Shi E W;Chen Z Z et al.[J].Journal of Materials Chemistry,2006,16:4141.
[25] Wei J;Li KZ;Li HJ;Fu QG;Zhang L .Growth and morphology of one-dimensional SiC nanostructures without catalyst assistant[J].Materials Chemistry and Physics,2006(1):140-144.
[26] S. K. Panda;J. Sengupta;C. Jacob .Synthesis of β-SiC/SiO_2 Core-Sheath Nanowires by CVD Technique Using Ni as Catalyst[J].Journal of nanoscience and nanotechnology,2010(5):3046-3052.
[27] Wang HT;Xie ZP;Yang WY;Fang JY;An LN .Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires[J].Crystal growth & design,2008(11):3893-3896.
[28] Li Z J;Gao W D;Meng A L et al.[J].Journal of Crystal Growth,2008,310:4401-4406.
[29] Wu, RB;Yang, GY;Gao, MX;Li, BS;Chen, JJ;Zhai, R;Pan, Y .Growth of SiC Nanowires from NiSi Solution[J].Crystal growth & design,2009(1):100-104.
[30] Yang G Y;Wu R B;Chen J J et al.[J].Nanotechnology,2007,18:155601.
[31] Sheng-Cheng Chiu;Yuan-Yao Li .Sic Nanowires In Large Quantities: Synthesis, Band Gap Characterization, And Photoluminescence Properties[J].Journal of Crystal Growth,2009(4):1036-1041.
[32] Niu JJ;Wang JN .Growth mechanism of scales of SiC nanowires with/without ZnS powders at varying temperatures[J].Applied physics, A. Materials science & processing,2009(3):613-618.
[33] Niu J J;Wang J N;Ning S X .[J].Solid State Sciences,2008,5(10):618-621.
[34] Niu JJ;Wang JN;Xu QF .Aligned silicon carbide nanowire crossed nets with high superhydrophobicity[J].Langmuir: The ACS Journal of Surfaces and Colloids,2008(13):6918-6923.
[35] Li G Y;Li X D;Chen Z D et al.[J].Journal of Physical Chemistry C,2009,113(41):17655-17660.
[36] Wei, GD;Qin, WP;Kim, RJ;Wang, GF;Zhu, PF;Zhang, DS;Zheng, KZ;Wang, LL .Large-scale synthesis and photoluminescence properties of SiC networks[J].Applied physics, A. Materials science & processing,2009(2):521-527.
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